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A method for blackening lithium niobate or lithium tantalate wafers based on ion implantation

An ion implantation, lithium niobate technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, electrical components, etc., can solve uneven color, equipment requirements, etc. Difficulty, easy to explode and other problems, to achieve the effect of increasing the carrier concentration, reducing the pyroelectric effect, and increasing the concentration of oxygen vacancies

Active Publication Date: 2021-12-21
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, there are some problems in the above methods. Reducing gases such as carbon monoxide and hydrogen are prone to explosion during heating treatment, which has great potential safety hazards. Wafer contact blackening treatment may cause different degrees of wafer blackening and uneven color. The use of carbonates and hydrides for reduction has insufficient reducibility and requires a relatively long processing time. Some potential disadvantages of other methods include the impact of particles adsorbed on the wafer surface on wafer quality and the difficulty in requiring corresponding equipment.

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  • A method for blackening lithium niobate or lithium tantalate wafers based on ion implantation

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Embodiment Construction

[0025] The technical solutions in the present application embodiment will be described in conjunction with the drawings in the present application embodiment. Obviously, the described embodiments are merely the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor, all other embodiments obtained.

[0026] The "one embodiment" or "Embodiment" hereinafter referred to herein means a specific feature, structure, or characteristic that can be included in at least one implementation of the present application. In the description of the embodiments of the present application, it is to be understood that the orientation or positional relationship indicated by "upper", "lower", "top", "bottom", etc. is based on the orientation or positional relationship shown in the drawings, only It is to facilitate the description of the present appl...

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Abstract

The present application provides a method for blackening a lithium niobate or lithium tantalate wafer based on ion implantation, comprising the following steps: obtaining a wafer, the wafer being a lithium niobate wafer or a lithium tantalate wafer; The wafer is subjected to reductive ion implantation treatment to obtain a wafer into which reductive ions are implanted; and the wafer into which reductive ions are implanted is subjected to annealing treatment. The method performs wafer blackening based on ion implantation, and can obtain high-quality blackened wafers without affecting the piezoelectric properties of the material. This method uses ion implantation technology to implant reducing ions such as Fe2+ into the lithium niobate or lithium tantalate wafer. The implantation of Fe2+ will occupy the lattice points of the original higher valence ions in the crystal lattice, increasing lithium niobate or tantalate. The concentration of oxygen vacancies in the lithium crystal increases the carrier concentration in the wafer, thereby increasing the conductivity of the wafer and reducing the resistivity. The subsequent annealing and repair of the wafer can effectively reduce the pyroelectric effect of the crystal.

Description

Technical field [0001] The present application relates to the technical field of post-treatment techniques, and in particular, to a lithium niobate or lithium niobate or a lithium-chip-free method of ion implantation. Background technique [0002] Lithium niobate (LINBO 3 , LN) and lithium tantalum (Litao 3 The LT) crystal is a very typical multi-functional crystal because it has excellent ferroelectric, piezoelectric, thermal release, acoustic, electro-optical, light and non-linear, and is currently widely used in the sound surface wavefriend. (SAW), optical communication and optical electronics. The sound surface wave filter is one of the very important application directions of LN and LT crystals. Since the color of the crystal cutting polishing has higher optical permeability, and the inherent thermal release effect, the preparation of SAW devices still exists Many inconveniences. [0003] First, lithium niobate and lithium tantalumide crystals have very high thermal release ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/253H01L41/22H10N30/04H10N30/01
CPCH10N30/04H10N30/01
Inventor 欧欣孙嘉良游天桂林家杰
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD