Unlock instant, AI-driven research and patent intelligence for your innovation.

Refresh and access modes for memory

A memory and memory array technology, applied in static memory, memory system, digital memory information, etc., can solve problems such as unreliable data

Active Publication Date: 2020-10-27
MICRON TECH INC
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Data stored in memory may become less reliable over time due to degradation mechanisms such as charge leakage and / or disturbance mechanisms associated with accessing a unit (e.g., read, write, erase, etc.)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Refresh and access modes for memory
  • Refresh and access modes for memory
  • Refresh and access modes for memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention includes apparatus and methods related to implementing a refresh mode and an access mode for a memory. Protecting data may include preventing unauthorized access to memory cells in which data is stored and / or improving retention (eg, reliability) of data stored in memory cells. Data stored in memory may become unreliable (eg, lost) due to various factors.

[0016] For example, charge leakage from a memory cell may result in loss of data stored in the memory cell. Various memory cells (eg, volatile memory cells) can be refreshed periodically at a certain rate to maintain stored data values. For example, a DRAM cell can be refreshed by charging a capacitor serving as the cell's charge storage structure to a particular voltage. Although in many cases the refresh process may be sufficient (eg, frequently enough) to maintain data integrity, the voltage on the cell capacitor may vary due to various factors. For example, memory cells corresponding to a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Apparatuses and methods related to implementing refresh and access modes for memory. The refresh and access modes can be used to configure a portion of memory. The portions of memory can correspond toprotected regions of memory. The refresh and access modes can influence the security level of data stored in the protected regions of memory.

Description

technical field [0001] The present disclosure relates generally to memory devices, and more particularly to apparatus and methods associated with implementing refresh and access modes for memory. Background technique [0002] Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic devices. There are many different types of memory, including volatile and non-volatile memory. Volatile memory can require power to maintain its data and includes Random Access Memory (RAM), Dynamic Random Access Memory (DRAM), and Synchronous Dynamic Random Access Memory (SDRAM), among others. Non-volatile memory can provide persistent data by maintaining stored data when not powered and can include NAND flash memory, NOR flash memory, read only memory (ROM), electrically erasable programmable ROM (EEPROM) , Erasable programmable ROM (EPROM) and resistance variable memory, such as phase change random access memory (PCRAM), resistive ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/406G11C11/408G11C8/20
CPCG11C11/40622G11C11/408G11C8/20G11C11/40618G11C11/4078G11C2211/4013G11C7/24G11C2211/4065G11C7/1045G06F21/79G06F12/1466G06F21/6218G06F3/0659G11C11/40611
Inventor N·J·迈尔
Owner MICRON TECH INC