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Electroluminescent device and display device

A technology of electroluminescent devices and light-emitting layers, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., and can solve problems such as the imbalance between the number of holes and electrons, affecting the luminous efficiency and life of the device, and material instability

Pending Publication Date: 2020-11-03
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the main luminescence mechanism of QLED is divided into injection luminescence and energy transfer luminescence, and most QLED devices are mainly based on injection luminescence. This injection luminescence is due to the energy level potential of holes and electrons injected into the quantum dot layer There is a large difference in the barrier, the number of holes and electrons in the quantum dot layer is unbalanced, which leads to the instability and failure of the material, which affects the luminous efficiency and life of the device, and cannot meet the needs of industrialization. Therefore, it is necessary to further improve the device. luminous efficiency and lifetime

Method used

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  • Electroluminescent device and display device
  • Electroluminescent device and display device
  • Electroluminescent device and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The present embodiment is an electroluminescence device, the structure is:

[0055] ITO / PEDOT:PSS / PVK / (CdSe / ZnS):mCP / PO-T2T / / LiF / Al, the structure diagram is as follows figure 2 shown.

[0056] Among them, the HOMO of the donor material mCP is 6.1eV, the LUMO is 2.4eV, and the triplet energy level is 2.94eV. The HOMO of the acceptor material PO-T2T is 6.83eV, the LUMO is 2.83eV, and the triplet energy level is 2.99eV. The emission spectrum of the exciplex formed by the two is in the blue band, and the triplet energy level is about 2.64eV. The excitation spectrum of CdSe / ZnS quantum dot material covers the wavelength band from ultraviolet to green light, and the emission spectrum is in the red light band. The excited state lifetime (about 500 ns) of the exciplex is 10 times that of the quantum dot (about 50 ns).

[0057] The preparation steps of the above-mentioned electroluminescent device are as follows:

[0058] (1) Substrate treatment: ultrasonically clean the ...

Embodiment 2

[0065] The present embodiment is an electroluminescence device, the structure is:

[0066] ITO / PEDOT:PSS / PVK / CsPbBr 3 :mCP / PO-T2T / LiF / Al, its structure diagram is as follows image 3 shown.

[0067] Among them, the HOMO of the donor material mCP is 6.1eV, the LUMO is 2.4eV, and the triplet energy level is 2.94eV. The HOMO of the acceptor material PO-T2T is 6.83eV, the LUMO is 2.83eV, and the triplet energy level is 2.99eV. The emission spectrum of the exciplex formed by the two is in the blue band, and the triplet energy level is about 2.64eV. CbBr 3 The excitation spectrum of quantum dot materials covers the wavelength band from ultraviolet to blue light, and the emission spectrum is in the green light band. The excited state lifetime of the exciplex (about 500 ns) is 20 times that of the quantum dot (about 25 ns).

[0068] The preparation steps of the above-mentioned electroluminescent device are as follows:

[0069] (1) Substrate treatment: ultrasonically clean the s...

Embodiment 3

[0076] The present embodiment is an electroluminescence device, the structure is:

[0077] ITO / PEDOT:PSS / PVK / (CdSe / ZnS):TCTA / DPTPCz / LiF / Al, the structure diagram is as follows Figure 4 shown.

[0078] Among them, the HOMO of the donor material TCTA is 5.7eV, the LUMO is 2.3eV, and the triplet energy level is 2.91eV. The HOMO of the acceptor material DPTPCz is 6.2eV, the LUMO is 3.2eV, and the triplet energy level is 2.77eV. The emission spectrum of the exciplex formed by the two is in the green band of the emission spectrum, and the triplet energy level is about 2.47eV. The excitation spectrum of CdSe / ZnS quantum dot material covers the wavelength band from ultraviolet to green light, and the emission spectrum is in the red light band. The excited state lifetime of the exciplex (about 4.5 μs) is 90 times that of the quantum dot (about 50 ns).

[0079] The preparation steps of the above-mentioned electroluminescent device are as follows:

[0080] (1) Substrate treatment: ...

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Abstract

An electroluminescent device includes an anode layer, a light-emitting layer disposed between the anode layer and the cathode layer, an acceptor material layer disposed between the light-emitting layer and the cathode layer, and a cathode layer disposed between the light-emitting layer and the acceptor material layer, wherein the light-emitting layer and the acceptor material layer are in contactwith each other; the acceptor material layer mainly comprises an acceptor material with an electron withdrawing capability, the light-emitting layer comprises a quantum dot material and a donor material with an electron donating capability which are mixed with each other, and the donor material in the light-emitting layer and the acceptor material in the acceptor material layer form an exciplex. The electroluminescent device can effectively avoid or reduce the problem that the number of holes and electrons is unbalanced due to the fact that the holes and the electrons are directly injected into the quantum dot material, and then the luminous efficiency and stability of the QLED device are improved.

Description

technical field [0001] The present application relates to the technical field of electronic display, in particular to an electroluminescent device and a display device. Background technique [0002] Quantum dots are nano-scale semiconductor crystals that can emit light. Due to the extremely small size of quantum dots, the movement of carriers is restricted, and the quantum confinement effect is particularly significant. When quantum dots are excited by light or electricity, they emit bright visible light with spectrally pure colors. Compared with OLED, QLED has many potential advantages: (1) The color can be adjusted by only changing the size of quantum dots without changing the device structure; It is integrated into LED by solution spin coating, transfer printing or inkjet printing, etc., and the production cost is low; (3) Quantum dot material is an inorganic semiconductor material. Compared with organic materials, it is not easily affected by water and oxygen, and its p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L27/32
CPCH10K59/00H10K50/11H10K2101/40H10K50/115H10K50/15H10K50/16
Inventor 黄航李哲宋晶尧谢相伟付东
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD