Laser emitting device

A laser emission and laser technology, applied in the field of nonlinear optical frequency conversion and laser, can solve the problems of signal light width and height, unfavorable frequency doubling, 780nm laser monochromaticity and poor coherence, etc., to improve output power and frequency doubling. Conversion efficiency, effect of preventing deterioration of line width and stability

Inactive Publication Date: 2020-11-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] In the process of realizing the concept of the present invention, the inventors have found that there are at least the following problems in the related art. The traditional method to generate 780nm laser is to use III-V group material semiconductor lasers. The 780nm laser produced has poor monochromaticity and coherence and needs to be integrated Tapered amplifier structure to increase output power
Moreover, the signal light width in the traditional method is very high, which is not conducive to the subsequent frequency multiplication

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] Laser frequency doubling is a kind of optical nonlinear effect, which belongs to the second harmonic generation process. It can be used to generate laser with a specific frequency according to the signal light source, and can maintain the coherence of the signal light source.

[0026] Aiming at the problem of poor monochromaticity and coherence of the laser light source in the traditional method of obtaining 780nm laser, the present invention provides a laser emitting device, which adopts laser frequency doubling technology and uses a high-performance laser light source with a narrow linewidth of 1560nm in the communication band as a signal The light is amplified by the fiber amplifier to above the threshold of the ...

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Abstract

The invention discloses a laser emitting device, which is used for generating 780nm laser in a direct frequency doubling mode. The device comprises a semiconductor laser, the wavelength of output laser being 1560 nm, and line width of output laser being smaller than 10 kHz; a double-concave-surface lens frequency doubling resonant cavity, comprising a first concave surface lens and a second concave surface lens which are oppositely arranged based on concave surfaces, a high-reflection film with the wavelength of 780 nm and an antireflection film with the wavelength of 1560 nm being evaporatedon the surface of the first concave surface lens, and a high-reflection film with the wavelength of 1560 nm and an antireflection film with the wavelength of 780 nm being evaporated on the surface ofthe second concave surface lens; and a frequency doubling crystal, the surface of the frequency doubling crystal being evaporated with antireflection films with wavelengths of 1560nm and 780nm, and the frequency doubling crystal being arranged between the first concave lens and the second concave lens and being used for carrying out frequency doubling treatment on the laser from the semiconductorlaser. According to the laser emitting device provided by the invention, emission of 780nm narrow-linewidth laser obtained by direct frequency multiplication of 1560nm is realized, and the frequency multiplication light width is further narrowed along with the narrowing of the signal light width.

Description

technical field [0001] The invention relates to the field of nonlinear optical frequency conversion and laser technology, in particular to a laser emitting device for direct frequency doubling of 780nm narrow-linewidth high-performance laser. Background technique [0002] 780nm laser is widely used in the fields of atomic physics and spectroscopy, atmospheric sensing and optical communication, especially because 780nm corresponds to the absorption line of the alkali metal element rubidium, so the research of 780nm laser light source is very important for quantum information storage, laser cooling and atomic capture , Quantum frequency calibration and other cutting-edge science have very important value. [0003] In the process of realizing the concept of the present invention, the inventors have found that there are at least the following problems in the related art. The traditional method to generate 780nm laser is to use III-V group material semiconductor lasers. The 780nm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/06H01S3/08H01S3/0941H01S3/10H01S3/13
CPCH01S3/0941H01S3/10061H01S3/13H01S3/08004H01S3/0619H01S3/0623H01S3/10H01S3/08H01S3/08059
Inventor 于海洋刘建国张景邹灿文
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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