Laser and manufacturing method thereof

A manufacturing method and laser technology, applied in lasers, laser components, semiconductor lasers, etc., can solve the problems of laser COMD failure, laser cavity susceptible to reflected light interference, etc.

Active Publication Date: 2020-11-06
度亘核芯光电技术(苏州)有限公司
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Problems solved by technology

For a high-power semiconductor laser with a ridge waveguide structure, although the output power of the laser can be increased by increasing the waveguide width, the increase in the waveguide width will cause an increase in the number of waveguide modes. A laser cavity with a high number of waveguide modes is more susceptible to interference from reflected light, making the laser more prone to COMD failure

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  • Laser and manufacturing method thereof
  • Laser and manufacturing method thereof
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Embodiment Construction

[0029] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.

[0030] In the description of the present application, the terms "first", "second" and the like are only used for distinguishing descriptions, and do not represent sequence numbers, nor can they be understood as indicating or implying relative importance.

[0031] In the description of the present application, the terms "horizontal", "vertical", "hanging" and the like do not mean that the components are required to be absolutely horizontal or hang, but may be slightly inclined. For example, "horizontal" only means that its direction is more horizontal than "vertical", and it does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0032] In the description of the present application, the orientation or positional relationship indicated by the terms "upper", "low...

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Abstract

The embodiment of the invention provides a laser and a manufacturing method thereof, and the laser comprises: a substrate which is sequentially provided with a first limiting layer, a quantum well anda second limiting layer from the bottom to the top; a ridge forming layer which is arranged on the second limiting layer, wherein the ridge forming layer comprises a plurality of waveguide structures, and the plurality of waveguide structures are distributed in an array mode; an ohmic contact layer which is arranged on the upper surface of the ridge region of the ridge forming layer; an insulating layer which is arranged on the side surface of the ridge region of the ridge forming layer and the groove region of the ridge forming layer; and a metal layer which is arranged on the ohmic contactlayer and the insulating layer. The COMD current threshold of the laser is improved while the output optical power of the laser is not reduced.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular, to a laser and a manufacturing method thereof. Background technique [0002] High-power semiconductor lasers have the advantages of small size, high efficiency, and easy integration, and have been widely used in ranging, lighting, printing, material processing, mechanical processing, and medical and health fields. Catastrophic optical mirror damage (Catastrophic optical mirror damage, COMD) is a major failure mode of high-power lasers. Increasing the COMD current threshold can effectively improve the output optical power and reliability of semiconductor lasers. [0003] The failure of COMD is mainly caused by the thermal effect caused by the absorption of laser light by the end of the chip, and the disturbance caused by the reflected light entering the laser cavity will increase the probability of COMD failure. For a high-power semiconductor laser with a ridge wav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/223H01S5/024H01S5/34
CPCH01S5/02461H01S5/223H01S5/34
Inventor 杨国文唐松赵卫东
Owner 度亘核芯光电技术(苏州)有限公司
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