Preparation method and application of single crystal GeSe triangular nanosheet array material
A nanosheet array and triangular technology, which is applied in the field of preparation of single crystal GeSe triangular nanosheet array materials, can solve the problems of limiting the application of GeSe nanomaterials and further breakthroughs
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Embodiment 1
[0025] (1) Cleaning of growth substrate and loading tray
[0026] The Si substrate (50*25*0.8 mm) was used as the growth substrate of the GeSe triangular nanosheet array, and two pieces of Al 2 o 3 Ceramic sheets (10*10*0.5 mm) were used as the first loading plate and the second loading plate respectively, and the growth substrate and the loading plate were respectively washed with deionized water, acetone, deionized water, ethanol, deionized Water ultrasonic vibration cleaning to completely remove the dirt on it, then soak the Si substrate in 10% hydrofluoric acid aqueous solution for 5 min, after the immersion time expires, rinse the Si substrate with deionized water to remove the hydrofluoric acid on the surface of the substrate, and then Finally, blow dry the above-mentioned growth substrate and the loading plate with a nitrogen gun;
[0027] (2) Growth of single crystal GeSe triangular nanosheet array material
[0028] ① Spread the GeSe powder 3 on the first loading tr...
Embodiment 2
[0031] (1) Cleaning of growth substrate and loading tray
[0032] The Si substrate (50*25*0.8 mm) was used as the growth substrate of the GeSe triangular nanosheet array, and two pieces of Al 2 o 3 Ceramic sheets (10*10*0.5 mm) were used as the first loading plate and the second loading plate respectively, and the growth substrate and the loading plate were respectively washed with deionized water, acetone, deionized water, ethanol, deionized Water ultrasonic vibration cleaning to completely remove the dirt on it, then soak the Si substrate in 10% hydrofluoric acid aqueous solution for 5 min, after the immersion time expires, rinse the Si substrate with deionized water to remove the hydrofluoric acid on the surface of the substrate, and then Finally, blow dry the above-mentioned growth substrate and the loading plate with a nitrogen gun;
[0033] (2) Growth of single crystal GeSe triangular nanosheet array material
[0034]① Spread 0.085 mg of GeSe powder 3 on the first loa...
Embodiment 3
[0037] (1) Cleaning of growth substrate and loading tray
[0038] The mica substrate (50*25*0.5 mm) was used as the growth substrate of the GeSe triangular nanosheet array, and two pieces of Al 2 o 3 Ceramic sheets (10*10*0.5 mm) were used as the first loading plate and the second loading plate respectively, and the growth substrate and the loading plate were respectively cleaned with deionized water, ethanol, and deionized water by ultrasonic oscillation until completely Remove the dirt on it, then soak the Si substrate in 10% hydrofluoric acid aqueous solution for 5 min, rinse the Si substrate with deionized water after the expiration of the soaking time to remove the hydrofluoric acid on the substrate surface, and then place the Si substrate through the aforementioned treatment Dry the growth substrate and loading tray with a nitrogen gun;
[0039] (2) Growth of single crystal GeSe triangular nanosheet array material
[0040] ① Spread the GeSe powder 3 on the first loadi...
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