Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for characterizing stability of nano material

A technology of nanomaterials and stability, which is applied in the field of characterizing the stability of nanomaterials, can solve problems such as limited application of insulators and semiconductor surfaces, damage of sample surfaces and probes, and generation of transverse shear force, etc., to achieve intuitive and easy-to-use characterization results Good control and stability

Pending Publication Date: 2020-11-20
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common nano-etching methods based on atomic force microscopy mainly include: (1) nano-scratch method; using the traditional contact mode, the needle tip is always in contact with the sample surface, and the scanning tube is moved to modify or remove the local sample surface to obtain any Nanostructure; its disadvantage is that it is in direct contact with the sample, and a transverse shear force will be generated during the scanning process, which will cause damage to the sample surface and the probe
(2) AFM electroetching method; its principle is to realize AFM etching by constructing a nanoscale electric field between the tip of the AFM probe and the local sample surface, including the following two types of mechanisms: one is the electrochemical mechanism, and the probe The voltage between the needle and the sample is sufficient to cause electrochemical / chemical corrosion, forming oxidation products to modify the local sample surface; the other is based on an electrophysical process, in which a discharge occurs in the nano-gap between the probe and the sample, and there may be an electric shock wear phenomenon, thereby removing or modifying the sample surface; this method is limited by the conductivity of the sample surface, and its application on the surface of insulators and semiconductors is limited
[0004] However, there is no report on AFM-based peak force tapping mode as a means of characterizing the stability of nanomaterials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for characterizing stability of nano material
  • Method for characterizing stability of nano material
  • Method for characterizing stability of nano material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] (1) The prepared reduced graphene oxide is placed in a beaker equipped with absolute ethanol, and after ultrasonic dispersion, pipette the dispersed suspension and drop it on a silicon wafer (silicon single-sided polished wafer), at room temperature Dry naturally to obtain the nanomaterial to be tested;

[0053] (2) The nanomaterial to be measured obtained in step (1) is fixed on the sample stage of the AFM, and the above-mentioned fixed is tapped with the peak force of the AFM probe in the tapping mode (cantilever resonance frequency is 2kHz) under atmospheric and room temperature conditions. The sample is scanned in situ to obtain its topography; the peak force is constant at 0.33nN, the scanning range is 5μm×5μm, and the scanning rate is 1.98Hz. The results are as follows: figure 1 , where a-e are the graphene topography observed by in-situ AFM, and f corresponds to the topography height change at the position of the white line in picture e;

[0054] (3) analyze the...

Embodiment 2

[0059] (1) The prepared two-dimensional V 2 The C MXene material was placed in a beaker filled with absolute ethanol, and after ultrasonic dispersion, the dispersed suspension was pipetted with a dropper and dropped onto a silicon wafer (silicon single-sided polished wafer), and dried naturally at room temperature to obtain the nanometer to be tested. Material;

[0060] (2) The nanomaterial to be measured obtained in step (1) is fixed on the sample stage of the AFM, and the above-mentioned fixed is tapped with the peak force of the AFM probe in the tapping mode (cantilever resonance frequency is 2kHz) under atmospheric and room temperature conditions. The sample is scanned in situ to obtain its topography; the peak force is constant at 0.26nN, the scanning range is 5μm×5μm, and the scanning rate is 1.98Hz. A topography map is obtained every 4 minutes and 19 seconds. The results are as follows figure 2 , where a-k are the two-dimensional material V observed by in-situ AFM 2 ...

Embodiment 3

[0066] (1) The prepared two-dimensional V 2 The C MXene material was placed in a beaker filled with absolute ethanol, and after ultrasonic dispersion, the dispersed suspension was pipetted with a dropper and dropped onto a silicon wafer (silicon single-sided polished wafer), and dried naturally at room temperature to obtain the nanometer to be tested. Material;

[0067] (2) The nanomaterial to be measured obtained in step (1) is fixed on the sample stage of the AFM, and the above-mentioned fixed is tapped with the peak force of the AFM probe in the tapping mode (cantilever resonance frequency is 2kHz) under atmospheric and room temperature conditions. Scan the sample in situ to obtain its topography; first keep the peak force at 0.26nN constant, observe in situ for a period of time, then increase the peak force to 1.33nN, and continue to observe the same area in situ; scanning range 5μm× 5μm, scan rate 1.98Hz, acquire a topography map every 12 minutes and 57 seconds, the resu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resonance frequencyaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for characterizing the stability of a nano material, which comprises the following steps: a) performing in-situ scanning on the nano material to be detected by adoptinga peak force tapping mode of an atomic force microscope to obtain topography images at different times; and b) determining the rate of nano-etching by changing the area of the selected region in thetopographic maps at different times obtained in the step a) to obtain a characterization result of the stability of the nano-material. Compared with the prior art, the method provided by the inventionfirstly proposes that the stability of the nano material is represented through the peak force tapping mode of the atomic force microscope, the method is simple to operate, easy to control and good in stability, the representation result is intuitive and reliable, and a new method and thought are provided for researching the stability of the nano material.

Description

technical field [0001] The invention relates to the technical field of nanomaterial characterization, and more specifically, relates to a method for characterizing the stability of nanomaterials. Background technique [0002] In recent years, due to the unique and excellent physical and chemical properties of nanomaterials, with continuous research and development, nanotechnology has become more and more mature, and the scope of application has become more and more extensive. At the same time, in order to further explore the morphology, structure and performance of micro-nano scale, the characterization technology of nano-materials is also constantly improving. Commonly used micro-nano characterization techniques include scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning tunneling microscopy (STM), atomic force microscopy (AFM), etc. According to different requirements, different sample properties and different experimental conditions, diff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01Q60/24G01Q30/20
CPCG01Q60/24G01Q30/20Y02P70/50
Inventor 沈彩陈立杭刘兆平
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com