Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lead frame and manufacturing method thereof

A manufacturing method and lead frame technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increasing penetration paths, not applicable to small-pitch products, and reducing overall airtightness, etc. Achieve the effect of reducing airtightness, improving overall yield, and reducing overall size

Inactive Publication Date: 2020-11-20
FUJIAN TIANDIAN OPTOELECTRONICS CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] If the lead frame is formed by the stamping process, it is impossible to make a more complex design like the etching process. Therefore, in terms of the density of the package arrangement, the stamped lead frame cannot be as dense as the etched lead frame, that is to say , not suitable for denser small-pitch products
[0005] If the lead frame is formed by etching process, because the front and back of the lead frame are etched with etching solution at the same time, the isotropic characteristics of wet etching make the etching distance too large, and the spacing between chips will be limited; in addition, this kind of There will be exposed metal pins on the four sides of the lead frame, which will increase the penetration path, reduce the overall airtightness, and cause a short circuit risk

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lead frame and manufacturing method thereof
  • Lead frame and manufacturing method thereof
  • Lead frame and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Specific structural and functional details disclosed herein are representative only and for purposes of describing example embodiments of the present invention. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

[0027] In describing the present invention, it should be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", " The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the referred device or Components must have a particular orientation, or be constructed and operated in a particular orientation, and therefore should not be construed as limiting the invention...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a lead frame and a manufacturing method thereof. The method comprises the following steps: etching a first surface of a metal substrate for the first time to form a first etching groove, forming a through positioning hole by penetrating through the edge of the first surface; and filling the first etching groove with a first insulating material, turning over the metal substrate, positioning the position of the metal substrate through the positioning holes, etching the second surface of the metal substrate subsequently for the second time to form a second etching groove communicated to the first etching groove, and finally performing surface electroplating treatment. Therefore, according to the lead frame and the manufacturing method thereof, by means of the secondaryetching technology, under the isotropic characteristic of wet etching, the etching penetration distance can be reduced so as to reduce the overall size, the design that no metal pins exist on the four faces is achieved, and the problems of air tightness reduction and short circuit caused by exposure of the metal pins are reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a lead frame and a manufacturing method thereof. Background technique [0002] In the field of semiconductor manufacturing technology, the lead frame (also called lead frame) is used as the chip carrier of the integrated circuit. It is a kind of bonding material (gold wire, aluminum wire, copper wire, etc.) The electrical connection forms the key structural part of the electrical circuit. It acts as a bridge connecting the external wires. Most of the semiconductor integrated blocks need to use the lead frame, which is an important basic component in the electronic information industry. [0003] The existing lead frame manufacturing method is to use stamping process or etching process to process the metal substrate into a target preset shape, and then directly perform surface electroplating treatment on it, or first complete the package and then perform post-p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/48H01L23/495
CPCH01L21/4814H01L21/4871H01L23/495
Inventor 陈彧杨皓宇洪国展陈锦庆张智鸿袁瑞鸿
Owner FUJIAN TIANDIAN OPTOELECTRONICS CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More