Photoelectric detector based on quantum dot grating enhancement, preparation method of photoelectric detector and detection light adjusting method

Abstract

The invention relates to a photoelectric detector based on quantum dot grating enhancement, a preparation method of the photoelectric detector and a detection light adjusting method. The photoelectricdetector based on quantum dot grating enhancement comprises an electrode layer, a quantum dot layer, a quantum dot high-refractive-index grating structure layer and a low-refractive-index grating structure layer which are connected in sequence. Due to the existence of the quantum dot high-refractive-index grating structure layer, the absorptivity of the photoelectric detector based on quantum dotgrating enhancement to long-wavelength light is improved, the detection responsivity of the photoelectric detector to the long-wavelength light is obviously improved, and differentiated detection oflight wavelength and different polarization states can be realized through the adjustment of structure parameters.

Description

technical field [0001] The invention belongs to the field of photoelectric detection, and relates to a photodetector based on quantum dot grating enhancement, a preparation method thereof, and a detection light adjustment method. Background technique [0002] Colloidal quantum dots (CQDs) have attracted considerable attention due to their widely tunable optical properties from the ultraviolet to the terahertz range. Their integration into optoelectronic devices presents another challenge due to the need to combine their optical properties and electron transport. The development of ligand-exchange processes is an important breakthrough in this regard, which allows us to achieve stronger electronic coupling as well as tuned CQD doping. Due to ligand exchange, the mobility has increased from 10-6cm2 V-1s-1 (for CQDs with long ligands) to 10-3~10-2cm2 V-1s-1. Mobilities as high as 1 can be achieved even with ionic / inorganic surface chemistry. However, despite the above progre...

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Problems solved by technology

[0004] CN109659374A discloses a photodetector, a method for preparing a photodetector, a photodetector array and a photodetection terminal, wherein the photodetector includes a substrate and an optical resonant cavity formed on the substrate: the The optical resonant cavity may include: a light absorbing layer having opposite light incident outer surfaces and a bottom outer surface, and an outer sidewall located between the light incident surface and the bottom surface; a light trapping layer covering the light rays incident surface; and a light reflective structure layer, covering the bottom outer surface and / or the outer sidewall of the light absorbing layer; wherein, the light reflective structure layer is used to reflect and pass through the light trapping structure layer The external light injected into the optical resonant cavity; it does not realize the differential detection of different polarized light and the regulation of the wavelength of the absorbed light; CN110311007A discloses a quantum dot near-infrared photodetection device, including a conductive base layer, a conductive The top of the base layer is sequentially provided with a first electron transport layer, a metal nanoparticle layer, a second electron transport layer, an infrared quantum dot layer, and a metal electrode; Differential detection of different polarized light and regulation of the wavelength of absorbed light

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