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Array substrate

An array substrate and substrate technology, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of large lamination stress and warpage of silicon oxide films, reduce compressive stress, improve warpage, and improve products The effect of yield

Active Publication Date: 2020-11-27
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Problems solved by technology

[0003] This application provides an array substrate to solve the technical problem of warping due to the compressive stress of the silicon oxide film layer being greater than the tensile stress

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  • Array substrate

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Embodiment Construction

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0028] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the a...

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Abstract

The invention provides an array substrate. The array substrate comprises a base, a substrate structure layer, a thin film transistor functional layer and at least one compressive stress neutralizing layer, the substrate structure layer is arranged on the base, the thin film transistor functional layer is arranged on the substrate structure layer, the compressive stress neutralizing layer is at least integrated on the substrate structure layer, and the tensile stress of the compressive stress neutralizing layer is greater than the compressive stress. The warping phenomenon caused by the fact that the pressure stress of the silicon oxide film layer is greater than the tensile stress is improved, and the product yield is improved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate. Background technique [0002] In flexible OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) products driven by top-gate thin film transistors, the inorganic film layers in the array substrate, such as barrier layers and buffer layers, are usually prepared from silicon oxide. However, under the current inorganic film deposition process conditions, since the compressive stress of the silicon oxide film is greater than the tensile stress, warping is prone to occur when the multi-layer silicon oxide film is stacked, which seriously affects the subsequent evaporation and other processes. The smooth progress, thus greatly reducing the product yield. Contents of the invention [0003] The present application provides an array substrate to solve the technical problem of warping due to the compressive stress of the silicon oxide film layer...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1218H01L27/1262Y02E10/549
Inventor 刘方梅
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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