Emergent circularly polarized light vertical structure Micro-LED for 3D display, and preparation method thereof

A technology of circularly polarized light and vertical structure, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of inconvenient viewing, and achieve the effects of good temperature stability, improved light extraction efficiency, and high luminous brightness

Active Publication Date: 2020-12-01
诺视科技(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to prevent crosstalk between the two images of the left eye and the right eye, the wearer needs to keep both eyes in the same horizontal plane when watching the picture, which brings inconvenience to the viewing

Method used

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  • Emergent circularly polarized light vertical structure Micro-LED for 3D display, and preparation method thereof
  • Emergent circularly polarized light vertical structure Micro-LED for 3D display, and preparation method thereof
  • Emergent circularly polarized light vertical structure Micro-LED for 3D display, and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The structure of the vertical structure Micro-LED facing 3D display in the present invention is as follows: Figure 10 As shown, the Micro-LED chip includes a micro-nano structure layer 12, a dielectric film layer 10, an n-GaN layer 3, an MQW layer 4, a p-GaN layer 5, a conductive layer 6 and a grating layer 7 from top to bottom; n- The width of GaN layer 3, MQW layer 4, p-GaN layer 5 is equal, the width of conductive layer 6 is equal to the width of grating layer 7; The width of dielectric film layer 10 is smaller than n-GaN layer 3, on the n-GaN layer The mesa 11 will leak out on both sides; the width of the grating is greater than that of the n-GaN layer 3, the MQW layer 4, and the p-GaN layer 5, and the mesa 11 will leak out on both sides of the conductive layer 6, and the n-GaN layer 3, the MQW layer 4, the p- The GaN layer 5 leaks two sidewalls; there is a passivation layer 8 on the mesa 11 and the sidewall; the shape of the passivation layer 8 is a right-angled Z...

Embodiment 2

[0055] The preparation method of the vertical structure Micro-LED that emits circularly polarized light for 3D display in the blue light area provided in this embodiment includes the following steps:

[0056] (1) On the (0001) plane sapphire (substrate 1), grow u-GaN layer 2 (5 μm in thickness), n-GaN layer 3 (5 μm in thickness), [InGaN (2nm) / GaN (10nm)] 8 MQW (quantum well) layer 4 (thickness is 96nm), p-GaN layer 5 (thickness is 100nm), obtains LED epitaxy material, the mass percentage content of In composition in MQW (InGaN quantum well) layer 4 is 15%, in In this embodiment, the emission wavelength is 470nm, which belongs to the blue light region. The structure of the obtained LED epitaxial material in step (1) is as follows: figure 1 shown.

[0057] (2) Fabricate the conductive layer 6 on the p-GaN layer 5 by means of electron beam evaporation, wherein the deposition temperature is 220° C., the conductive layer is ITO, and the thickness of the conductive layer 6 is 280...

Embodiment 3

[0068] The preparation method of the vertical microcavity GaN-based Micro-LED with the green light area facing the display and emitting circularly polarized light provided in this embodiment includes the following steps:

[0069] (1) First, grow u-GaN layer 2 (5 μm in thickness), n-GaN layer 3 (5 μm in thickness), [InGaN (2 nm) / GaN ( 10nm)] 8 MQW (quantum well) layer 4 (thickness: 96nm), p-GaN layer 5 (thickness: 100nm), to obtain LED epitaxial material. The mass percentage of In in the MQW (InGaN quantum well) layer 4 is 28%. In this embodiment, the emission wavelength is 530nm, which belongs to the green light region. The structure of the obtained LED epitaxial material in step (1) is as follows: figure 1 shown.

[0070] (2) The conductive layer 6 is fabricated on the p-GaN layer 5 by means of electron beam evaporation, wherein the deposition temperature is 220° C., the conductive layer is ITO, and the thickness of the conductive layer 6 is 280 nm. The structure obtained...

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Abstract

The invention discloses an emergent circularly polarized light vertical structure micro-cavity Micro-LED for 3D display, and a preparation method thereof. According to the invention, the micro-cavityMicro-LED can emit circularly polarized light, and the circularly polarized light is adopted for 3D polarized display, so that the crosstalk problem of patterns caused by inclination of glasses can beeliminated only by setting the optical axis position of the circularly polarized glasses; the thickness of a chip is reduced, and a grating on a conductive layer and a dielectric film reflector on an-GaN layer are used as the end surface of a resonant cavity to form a resonant micro-cavity structure in the vertical direction, so that the light emission of the side wall is inhibited, and the light emission directivity of the front surface is improved; the resonant micro-cavity structure selects a specific wavelength, so that the luminescent spectrum is narrowed, the spectral purity is higher,and the threshold of Micro-LED display can be improved; the grating has polarization selection light emitting property, so that the emergent light passing through the structure is linearly polarizedlight; and a micro-nano structure is integrated at the top and is equivalent to a 1 / 4 wave plate, so that the linearly polarized light is converted into circularly polarized light.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Micro-LED with a vertical structure for emitting circularly polarized light facing 3D display and a preparation method thereof. Background technique [0002] Micro-LED has important applications in display and visible light communication. The display industry is a leading industry in the information age, with an annual output value of more than 100 billion U.S. dollars. Light-emitting diodes (LEDs) have gradually become the mainstream in the field of display lighting due to their irreplaceable advantages of energy saving, high efficiency, durability, and mercury-free. Micro-LED is considered to be the most potential display technology after TFT-LCD and AMOLED technology due to its excellent characteristics such as ultra-high resolution, high brightness, ultra-power saving and fast response. Traditional two-dimensional display devices try to restore the real three-dimens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46H01L33/44
CPCH01L33/44H01L33/465H01L2933/0025
Inventor 汪炼成高祥徐意胡泽林
Owner 诺视科技(苏州)有限公司
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