Polarization microstructure Micro-LED and application thereof in naked eye 3D display system
A display system and microstructure technology, applied in the direction of instruments, electrical components, circuits, etc., can solve the problems of high price, high production cost of cylindrical lens grating, limited application, etc. The effect of high-definition picture
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Embodiment 1
[0053] Such micro-structure of the present invention, such as Micro-LED infrastructures Figure 9 Shown, from bottom to top comprises a metal substrate 7, a conductive layer 6, a nitride layer 5, a multi-quantum well active layer 4, two nitride layer 3, an oxide DBR10, polarizing microstructured surface 12. The width of the metal substrate and the conductive layer 7 is equal to 6; the width of a nitride layer 5 is smaller than the conductive layer 6, a nitride layer 5, a multi-quantum well active layer 4, the width of the two nitride layers 3 are equal, so that nitrogen 5 a layer of a multiple quantum well active layer 4, the nitride layer 3 may be two two mesas 11 are exposed at both sides of its flat sidewall leakage, the conductive layer 6; the width is less than the nitrogen oxide DBR10 3 of two layers, the two ends of the nitride layer 3 will leak out table 11, with a passivation layer 8 on the table 11 and the side walls; the passivation layer is provided on the side of the o...
Embodiment 2
[0057] Preparation of the microstructure of the blue region of Micro-LED emission wavelength belongs:
[0058] (1) on the (0001) plane sapphire (substrate 1) are sequentially grown by the MOCVD method u-GaN layer 2 (thickness of 5μm), two of the nitride layer 3 (made of n-GaN, having a thickness of 5μm), [ InGaN (2nm) / GaN (10nm)] 8 The MQW (Quantum Well) layer 4 (having a thickness of 96 nm), a nitride layer, a 5 (material of p-GaN, having a thickness of 100 nm or), obtained LED epitaxial material, the emission wavelength of the MQW (Quantum Well) the In group 4 layers parts by mass percentage of 15%; in the embodiment of the present embodiment is a light emission wavelength 470nm, it belongs to the blue region, the structure of LED epitaxial material obtained in step (1) as figure 1 Indicated.
[0059] (2) electron beam evaporation method of fabricating a conductive layer on the nitride layer 6 is a 5, wherein the deposition temperature is 220 deg.] C, the conductive layer is a...
Embodiment 3
[0070] Preparation of the green region of the microstructure of Micro-LED emission wavelength belongs:
[0071] (1) on the (0001) plane sapphire (substrate 1) are sequentially grown by the MOCVD method u-GaN layer 2 (thickness of 5μm), two of the nitride layer 3 (made of n-GaN, having a thickness of 5μm), [ InGaN (2nm) / GaN (10nm)] 8 The MQW (Quantum Well) layer 4 (96 nm thick), a nitride layer 5 (made of p-GaN with a thickness of 100 nm or), obtained LED epitaxial material, the emission wavelength of the MQW (Quantum Well) layer 4 In composition mass percentage of 28%, in the present embodiment, the light emitting wavelength of 525nm, belonging to green region. LED epitaxial structure material obtained in step (1) as figure 1 Indicated.
[0072] (2) electron beam evaporation method of fabricating a conductive layer on the nitride layer 6 is a 5, wherein the deposition temperature is 220 deg.] C, the conductive layer is an ITO, thickness of the conductive layer 6 is 280nm.
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