A 3D display-oriented micro-led with a vertical structure for emitting circularly polarized light and its preparation method

A technology of circularly polarized light and vertical structure, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as inconvenient viewing, achieve good temperature stability, improve signal stability, and improve light extraction efficiency

Active Publication Date: 2022-03-11
NUOSHI TECH (SUZHOU) CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to prevent crosstalk between the two images of the left eye and the right eye, the wearer needs to keep both eyes in the same horizontal plane when watching the picture, which brings inconvenience to the viewing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A 3D display-oriented micro-led with a vertical structure for emitting circularly polarized light and its preparation method
  • A 3D display-oriented micro-led with a vertical structure for emitting circularly polarized light and its preparation method
  • A 3D display-oriented micro-led with a vertical structure for emitting circularly polarized light and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The structure of the vertical structure Micro-LED facing 3D display in the present invention is as follows: Figure 10 As shown, the Micro-LED chip includes a micro-nano structure layer 12, a dielectric film layer 10, an n-GaN layer 3, an MQW layer 4, a p-GaN layer 5, a conductive layer 6 and a grating layer 7 from top to bottom; n- The width of GaN layer 3, MQW layer 4, p-GaN layer 5 is equal, the width of conductive layer 6 is equal to the width of grating layer 7; The width of dielectric film layer 10 is smaller than n-GaN layer 3, on the n-GaN layer The mesa 11 will leak out on both sides; the width of the grating is greater than that of the n-GaN layer 3, the MQW layer 4, and the p-GaN layer 5, and the mesa 11 will leak out on both sides of the conductive layer 6, and the n-GaN layer 3, the MQW layer 4, the p- The GaN layer 5 leaks two sidewalls; there is a passivation layer 8 on the mesa 11 and the sidewall; the shape of the passivation layer 8 is a right-angled Z...

Embodiment 2

[0055] The preparation method of the vertical structure Micro-LED that emits circularly polarized light for 3D display in the blue light area provided in this embodiment includes the following steps:

[0056] (1) On the (0001) plane sapphire (substrate 1), grow u-GaN layer 2 (5 μm in thickness), n-GaN layer 3 (5 μm in thickness), [InGaN (2nm) / GaN (10nm)] 8 MQW (quantum well) layer 4 (thickness is 96nm), p-GaN layer 5 (thickness is 100nm), obtains LED epitaxy material, the mass percentage content of In composition in MQW (InGaN quantum well) layer 4 is 15%, in In this embodiment, the emission wavelength is 470nm, which belongs to the blue light region. The structure of the obtained LED epitaxial material in step (1) is as follows: figure 1 shown.

[0057] (2) Fabricate the conductive layer 6 on the p-GaN layer 5 by means of electron beam evaporation, wherein the deposition temperature is 220° C., the conductive layer is ITO, and the thickness of the conductive layer 6 is 280...

Embodiment 3

[0068] The preparation method of the vertical microcavity GaN-based Micro-LED with the green light area facing the display and emitting circularly polarized light provided in this embodiment includes the following steps:

[0069] (1) First, grow u-GaN layer 2 (5 μm in thickness), n-GaN layer 3 (5 μm in thickness), [InGaN (2 nm) / GaN ( 10nm)] 8 MQW (quantum well) layer 4 (thickness: 96nm), p-GaN layer 5 (thickness: 100nm), to obtain LED epitaxial material. The mass percentage of In in the MQW (InGaN quantum well) layer 4 is 28%. In this embodiment, the emission wavelength is 530nm, which belongs to the green light region. The structure of the obtained LED epitaxial material in step (1) is as follows: figure 1 shown.

[0070] (2) The conductive layer 6 is fabricated on the p-GaN layer 5 by means of electron beam evaporation, wherein the deposition temperature is 220° C., the conductive layer is ITO, and the thickness of the conductive layer 6 is 280 nm. The structure obtained...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a microcavity Micro-LED with a vertical structure for emitting circularly polarized light facing 3D display and a preparation method thereof. The microcavity Micro-LED of the present invention can emit circularly polarized light and use circularly polarized light for 3D polarized light display , as long as the optical axis position of the circularly polarized glasses is set properly, the crosstalk problem of the pattern caused by the tilt of the glasses can be eliminated. The present invention reduces the thickness of the chip, and uses the grating on the conductive layer and the dielectric film mirror on the n-GaN layer as the end face of the resonant cavity to form a resonant microcavity structure in the vertical direction, which will suppress the light from the side wall and improve the direction of light from the front sex. At the same time, the resonant microcavity structure will select a specific wavelength to narrow the emission spectrum and have higher spectral purity, which will help increase the threshold value of Micro-LED display. Moreover, the grating has polarization selective light output, and the output light through this structure is linearly polarized light. The top integrated micro-nano structure is equivalent to a 1 / 4 wave plate, which converts linearly polarized light into circularly polarized light.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Micro-LED with a vertical structure for emitting circularly polarized light facing 3D display and a preparation method thereof. Background technique [0002] Micro-LED has important applications in display and visible light communication. The display industry is a leading industry in the information age, with an annual output value of more than 100 billion U.S. dollars. Light-emitting diodes (LEDs) have gradually become the mainstream in the field of display lighting due to their irreplaceable advantages of energy saving, high efficiency, durability, and mercury-free. Micro-LED is considered to be the most potential display technology after TFT-LCD and AMOLED technology due to its excellent characteristics such as ultra-high resolution, high brightness, ultra-power saving and fast response. Traditional two-dimensional display devices try to restore the real three-dimens...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46H01L33/44
CPCH01L33/44H01L33/465H01L2933/0025
Inventor 汪炼成高祥徐意胡泽林
Owner NUOSHI TECH (SUZHOU) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap