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Semiconductor graphite crucible for thermal field of single crystal furnace and using method thereof

A technology of graphite crucible and furnace heat field, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of slow heat loss, difficulty in melting, and low production efficiency, so as to reduce waiting time and accelerate melting speed , the effect of improving production efficiency

Active Publication Date: 2021-11-30
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the polysilicon is melted in the existing single crystal furnace, the polysilicon near the quartz crucible melts first, and finally the polysilicon in the middle part is wrapped by the polysilicon liquid, which is difficult to melt, and it takes a long time to melt the polysilicon completely. The production efficiency is low; when the existing single crystal furnace is shut down, the heating element is closed, and the waste heat in the heat field components can only be transferred and radiated to the furnace bottom plate, furnace cylinder, furnace cover and auxiliary chamber by the natural heat of the insulation material. , and then through the circulating water to take away the heat from the surface of the furnace bottom plate, furnace tube, furnace cover and auxiliary chamber, the heat is lost slowly and the cooling time is long; after cooling, the temperature in the single crystal furnace is still very high when the furnace is disassembled, resulting in Due to the high temperature, parts in the thermal field are partially oxidized, and the aging speed of the thermal field is relatively fast, resulting in a low service life of graphite parts

Method used

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  • Semiconductor graphite crucible for thermal field of single crystal furnace and using method thereof
  • Semiconductor graphite crucible for thermal field of single crystal furnace and using method thereof
  • Semiconductor graphite crucible for thermal field of single crystal furnace and using method thereof

Examples

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Effect test

Embodiment 1

[0032] Example 1: See Figure 1-7A semiconductor graphite crucible for a single crystal furnace, including a single crystal flyer body, the single crystal bond body, is fixed to the top of the top surface of the bottom plate 7, and the single crystal flyer body comprises a housing 1 and an inner casing. 10, the outer casing 1 and the inner casing 10 are all sleeves upward, and the diameter of the outer casing 1 is larger than the diameter of the inner casing 10, and the bottom surface of the outer casing 1 is axially provided with an inner casing 10, and the outer casing 1 The cavity is formed between the inner casing 10, facilitating the cold water to wrap the inner casing 10 so that the heat of the single crystal furnace is quickly taken away to reach the quick to the single crystal furnace. The central portion of the inner casing 10 is axially secured to the graphite crucible 15, and the graphite crucible 15 is opened upward, and the bottom axial direction of the graphite crucib...

Embodiment 2

[0038] Example 2: See Figure 7 In the present embodiment, the present invention also proposes a method of using a semiconductor graphite crucible for a single crystal furncome, including the following steps:

[0039] Step 1, first, the first motor 6, the second motor 18, the third motor 24, the graphite heating device are electrically connected to the external power supply, and then polycrystalline silicon is then placed in quartz crucible 14, and the polysilicon is pulverized by the hot field;

[0040] Step 2, start the second motor 18, rotate the drive gear 16 by the output shaft of the second motor 18, the gear 16 drives the rack plate 20 to move up and down, the rack plate 20 drives the support plate 5 to move, the support plate 5 drive the stirring assembly Up and down, it is convenient for the movement of the stirring blade 34;

[0041] Step 3, start the first motor 6, the output shaft of the first motor 6 drives the long axis 33, and the long axis is allowed to stir the bla...

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Abstract

The invention discloses a semiconductor graphite crucible for the thermal field of a single crystal furnace and a method for using the same. , the middle part of the bottom surface of the inner shell is axially fixed with a graphite crucible, the bottom of the graphite crucible is axially equipped with a quartz crucible, each guide rod is slidably connected with a lower insulation tube, and the outer wall of the lower insulation cylinder is provided with a lifting assembly, The bottom surface of the inner shell between the lower insulation tube and the graphite crucible is provided with several graphite heating devices in the axial direction, the top of the shell is provided with a furnace cover, the middle part of the top surface of the support plate is provided with a stirring assembly, and one end of the bottom surface of the support plate is provided with Adjusting components; the invention can stir the polysilicon in the quartz crucible, thereby accelerating the melting of polysilicon and improving production efficiency; at the same time, it can quickly reduce the temperature in the single crystal furnace, and avoid the phenomenon of partial oxidation of thermal field components due to high temperature , Improve the service life of graphite parts.

Description

Technical field [0001] The present invention relates to the field of graphite crucible, and more particularly to a semiconductor graphite crucible for single crystal furnace thermal field and its use. Background technique [0002] The hot field is generally referring to a heat system in a single crystal furnace. A single crystal furnace is a polycrystalline material such as polycrystalline silicon by a graphite heater to grow a deactivated single crystal with a graphite heater. However, the existing single crystal furnace is fulating in polycrystalline silicon in polysilicon, and the polysilicon in the last intermediate portion is wrapped by polysilicon liquid, it is difficult to melt, and it takes a long time to make polysilicon all melt, wait for a long time, resulting in longer Production efficiency bottom; existing single crystal furnaces When the heat generating body, the heat of the heat generating body, the hot field component can only be transmitted and radiated to the bo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/10C30B15/12C30B29/06
CPCC30B15/10C30B15/12C30B29/06
Inventor 武晨洁张培林武建军柴利春张作文王志辉
Owner DATONG XINCHENG NEW MATERIAL CO LTD