SIW filter for Q-band transmitting-receiving front end

Abstract

The invention relates to the technical field of wireless communication, in particular to an SIW filter for a Q-band transceiving front end, which comprises a first metal layer, a first dielectric layer and a second metal layer which are arranged from top to bottom, first metallized blind holes penetrating through the first metal layer, the first dielectric layer and the second metal layer are periodically arranged to form a first resonant cavity, a second resonant cavity, a third resonant cavity and a fourth resonant cavity. Inductive coupling windows are arranged between the first resonant cavity and the second resonant cavity, between the second resonant cavity and the third resonant cavity, and between the third resonant cavity and the fourth resonant cavity. Cross coupling between thefirst resonant cavity and the fourth resonant cavity is realized through a quarter-wavelength microstrip line. According to the invention, the SIW filter is realized by adopting the four-cavity compact resonator with the cross-coupled structure, so that the suppression on local oscillator leakage and mirror image frequency can be effectively improved, and the performance index of the millimeter wave transmitting-receiving front end is improved.

Description

technical field [0001] The invention relates to the technical field of wireless communication, in particular to an SIW filter used for a Q-band transceiver front end. Background technique [0002] In modern microwave wireless communication systems, passive components such as filters play a very important role in the circuit. If the traditional metal waveguide, microstrip line or coplanar waveguide is used to design, either the cost is expensive or it is difficult to meet the required technical indicators. On the other hand, with the rapid development of microwave and millimeter wave integrated circuits, these traditional microwave circuit structures can no longer meet the requirements of modern wireless communications for the miniaturization and integration of microwave components. The resulting problems of electromagnetic compatibility and electromagnetic interference will also become increasingly prominent. [0003] The existing waveguide structures can be divided into t...

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Problems solved by technology

The planar structure includes microstrip line, coplanar waveguide, etc. Although this structure is easy to integrate with the system, the existence of its own conductor loss, radiation loss and dielectric loss is not conducive to the circuit design of the millimeter wave frequency band, nor can it form a High-Q components; non-planar structures include dielectric waveguides, coaxial cables, etc. Although this structure can form high-performance components, it is difficult to process and integrate with planar circuits, and local oscillator leakage and image frequency are not obtained. Inhibition, low performance of transceiver front-end

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