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Method for enabling NH4H2PO4 antiferroelectricity to disappear

A NH4H2PO4, antiferroelectric technology, applied in the selection of materials, phosphates, phosphorus oxyacids, etc., can solve problems such as impurity of samples, and achieve the effect of short preparation cycle and simple operation

Inactive Publication Date: 2020-12-11
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional NH 4 h 2 PO 4 The method for the disappearance of antiferroelectricity is usually to convert NH 4 h 2 PO 4 Heating to above 430K, but the heating process will make NH 4 h 2 PO 4 Partial decomposition will occur and the resulting sample will be impure

Method used

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  • Method for enabling NH4H2PO4 antiferroelectricity to disappear
  • Method for enabling NH4H2PO4 antiferroelectricity to disappear
  • Method for enabling NH4H2PO4 antiferroelectricity to disappear

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Will NH 4 h 2 PO 4 The crystals were fully ground in a vessel for 3 hours, and the NH 4 h 2 PO 4 The crystal, the pressure transmission medium and the pressure calibration object are put into the diamond counter-anvil device and sealed. Choose T301 steel sheet as the gasket material, use the diamond anvil device to pre-press the gasket, use diamond to pre-press the anvil, and leave the diamond anvil surface indentation and diamond anvil surface on the steel sheet from the center to the outside. Chamfer indentation, diamond anvil side edge indentation. A laser drilling machine is used to drill a hole concentrically with the indentation on the surface of the diamond anvil, and the diameter of the hole is 120 nm. The sample is placed in a diamond-anvil-sealed sample cavity, with 1 drop of silicone oil as the pressure transmission medium; the ruby ​​fluorescence peak is used as the calibration object of the pressure, and the ruby ​​is preferably placed in the center o...

Embodiment 2

[0023] Raise the internal pressure of the sample cavity of the diamond-anvil device in Example 1 to 4.55GPa, stabilize the Raman spectrum for 3 minutes, and observe that the intensity of the Raman spectrum is weakened. For specific results, see figure 2 .

Embodiment 3

[0025] Slowly increase the internal pressure in the sample cavity of the diamond anvil device in Example 2 to 5.15GPa, stabilize for 3 minutes and test the Raman spectrum. Under this condition, at 900-1300cm -1 There are new peaks in the wavelength range, indicating that the pressure changes the NH 4 h 2 PO 4 The structure of , the peak is excited in the Raman spectrum. For specific Raman spectroscopy test results, see image 3 , which is found to consist of three peaks by Lorentz fitting, see Figure 4 .

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Abstract

The invention relates to a method for enabling NH4H2PO4 antiferroelectricity to disappear, which belongs to the technical field of functional material preparation, and is completed in a diamond anvilcell device, a T301 steel sheet is used as a gasket, the gasket is pre-pressed by the diamond anvil cell device, and a laser drilling machine is used for concentrically drilling holes at indentationson the anvil surface of a diamond anvil cell to be used as a sample cavity; NH4H2PO4 powder, a pressure transmission medium and a pressure calibration object are sealed in a diamond anvil cell device,the pressure of the anvil cell device is set to be 6.59-15.0 GPa, pressure is applied to a sample, and the pressure is kept for 3 minutes to obtain the NH4H2PO4 crystal of which the antiferroelectricity disappears. The method can be implemented at room temperature, the operation is simple, the preparation period is short, impurities are not easy to introduce into the prepared crystal, and the purity of the prepared product is high.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional materials, in particular to a method of making NH 4 h 2 PO 4 The method of antiferroelectric disappearance. Background technique [0002] Among functional dielectric materials, especially ferroelectric and antiferroelectric materials, due to their unique physical properties under the action of external factors, they have become indispensable key materials in many optoelectronic information functional electronic components. However, the ferroelectric and antiferroelectric materials currently in commercial use are mostly lead-containing compounds, which are easy to volatilize during high-temperature production, resulting in an increase in the "lead" content in the atmosphere. In response to the increasing global air pollution and potential threats to human health, "environmentally friendly" lead-free materials have become the focus of global scientists and engineers in recent ye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/28H01L43/10
CPCC01B25/28C01P2002/82H10N50/85
Inventor 韩永昊张翠婷刘学曹敏张鑫高春晓
Owner JILIN UNIV