A high-strength mullite-based glass-ceramic material and its preparation method
A glass-ceramic, mullite-based technology, applied in semiconductor/solid-state device parts, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor stability, unreliable silicon chip packaging, low bending strength, etc. The effect of low dielectric loss, compact structure and low dielectric constant
Active Publication Date: 2021-10-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
[0006] The object of the present invention is to aim at above-mentioned MgO-Al 2 o 3 -SiO 2 A high-strength mullite-based glass-ceramic material and a preparation method thereof are provided for problems such as unreliable packaging with silicon chips and poor stability due to low bending strength of the glass-ceramic material
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[0023] Its concrete example is as follows:
[0024] Accurately calculate the actual amount of the corresponding raw materials according to the mass percentage of each oxide in Table 1 of the design formula, mix and ball mill for 3 to 4 hours, mix evenly and dry, put the mixture in a crucible, and melt at 1450-1500 °C for 1-2 hours, After water quenching, glass slag is obtained. After ball milling for 0.5-1 hour, dry and continue ball milling with deionized water for 6-8 hours, and then dry the powder to granulate with PVA as a binder. ~2h, a high-strength mullite-based glass-ceramic material is obtained, and its dielectric properties, thermal properties, mechanical properties, bulk density and crystallinity are shown in Table 2:
[0025] Table 2
[0026]
[0027] Wherein, the XRD figure of a kind of high-strength mullite-based glass-ceramic of embodiment 3 is as follows figure 1 As shown, it can be seen from the figure that the main crystal phase is Mullite (mullite), an...
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Abstract
The invention belongs to the field of electronic ceramic materials, and provides a high-strength mullite-based glass-ceramic material and a preparation method thereof; used to solve the problem of existing MgO-Al 2 o 3 ‑SiO2 2 The low bending strength of glass-ceramic materials leads to problems such as unreliable packaging with silicon chips and poor stability. The high-strength mullite-based glass-ceramic material of the present invention is composed as follows according to the mass percentage: MgO is 10-14wt%, Al 2 o 3 30~34wt%, SiO 2 41~45wt%, B 2 o 3 1~5wt%, ZrO 2 5~9wt%, Y 2 o 3 It is 1-5wt%; the glass-ceramic material has mullite as the main crystal phase, which greatly enhances the mechanical properties of the material (bending strength is 180-230MPa, Young's modulus is 85-100GPa); and, the material High bulk density (2.72~2.76g / cm 3 ), high crystallinity (60%~70%); at the same time, the dielectric constant of the high-strength mullite-based glass-ceramic material of the present invention is low: 5.0~6.0 (@1MHz), and the dielectric loss is low: 1.0~2.0×10 ‑3 (@1MHz), improve signal transmission speed; low thermal expansion coefficient: 4.0~5.0×10 ‑6 / °C, suitable for packaging substrates for large-scale integrated circuits.
Description
technical field [0001] The invention belongs to the field of electronic ceramic materials, and relates to a high-strength mullite-based glass-ceramic material and a preparation method thereof; it is especially suitable for making packaging substrates for large-scale integrated circuits. Background technique [0002] With the rapid development of large-scale integrated circuits, the requirements for packaging materials have become higher; MgO-Al 2 o 3 -SiO 2 Due to the characteristics of low thermal expansion coefficient and excellent low-frequency dielectric properties, glass-ceramic glass-ceramics has been paid close attention to by researchers; but the currently developed MgO-Al 2 o 3 -SiO 2 The glass-ceramic still has disadvantages such as high sintering temperature and poor mechanical properties. [0003] For example, Journal of Materials Science, 2007, 42:7239-7244 reported the effect of CaO doping on the properties of magnesium-aluminum-silicon glass-ceramics, the...
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IPC IPC(8): C03C10/08H01L23/15
CPCC03C10/0045H01L23/15
Inventor 李波高陈熊赵翔浔
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA