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Preparation method of PMN-PSN ultra-high breakdown electric field thin film material

A thin film material and electric field technology, applied in the field of chemical engineering, can solve the problems of unbearable high breakdown electric field and low energy storage density, and achieve the effect of small grain size, high purity, and super electric field breakdown strength

Active Publication Date: 2020-12-11
GUANGXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Electric card refrigeration has seen little progress in the past for a long time, because only small ΔT and ΔS can be observed, which is due to the limitation of low dielectric breakdown strength in bulk ceramics; traditional bulk ceramics Due to the influence of the microstructure and performance of the material itself, it is difficult for the material to withstand a high breakdown electric field, so the value of the energy storage density is relatively low. Based on the above limitations, it is urgent to find a material with ultra-high electric field breakdown strength

Method used

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  • Preparation method of PMN-PSN ultra-high breakdown electric field thin film material
  • Preparation method of PMN-PSN ultra-high breakdown electric field thin film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Weigh Pb(CH 3 COO) 2 ·3H 2 O, Mg with 5% excess Mg (OC 2 h 5 ) 2 and C 10 h 25 o 5 Nb was dissolved in a mixed liquid composed of glacial acetic acid and deionized water at 100°C to form the first liquid, and then Pb(CH 3 COO) 2 ·3H 2 O, N 3 o 9 Sc H 2 O and C 10 h 25 o 5 Nb was dissolved in glacial acetic acid and CH at room temperature 3 COCH 2 COCH 3 The second liquid is formed in the mixed liquid, and finally the previous first liquid and the second liquid are mixed again at 100 ° C for 30 min, and left for 20 h to obtain 0.5 Pb (Mg 0.5 Nb 0.5 )O 3 -0.5Pb(Sc 0.5 Nb 0.5 )O 3 Precursor solution;

[0029] (2) Spin-coat the PMN-PSN precursor solution obtained in step (1) for 10s at a speed of 500rpm using a homogenizer, and then spin-coat at a speed of 4000rpm for 30s on the Pt(111) substrate to obtain a wet film;

[0030] (3) The wet film prepared in step (2) was first dried at 300°C for 3 minutes, then pyrolyzed at 500°C for 3 minutes, and...

Embodiment 2

[0033] (1) Weigh Pb(CH 3 COO) 2 ·3H 2 O, Mg with 5% excess Mg (OC 2 h 5 ) 2 and C 10 h 25 o 5 Nb was dissolved in a mixed liquid composed of glacial acetic acid and deionized water at 100°C to form the first liquid, and then Pb(CH 3 COO) 2 ·3H 2 O, N 3 o 9 Sc H 2 O and C 10 h 25 o 5 Nb was dissolved in glacial acetic acid and CH at room temperature 3 COCH 2 COCH 3 The second liquid is formed in the mixed liquid, and finally the previous first liquid and the second liquid are mixed again at 100 ° C for 30 min, and left for 20 h to obtain 0.5 Pb (Mg 0.5 Nb 0.5 )O 3 -0.5Pb(Sc 0.5 Nb 0.5 )O 3 Precursor solution;

[0034] (2) Spin-coat the PMN-PSN precursor solution obtained in step (1) for 10s at a speed of 500rpm using a homogenizer, and then spin-coat at a speed of 4000rpm for 30s on the Pt(111) substrate to obtain a wet film;

[0035] (3) The wet film prepared in step (2) was first dried at 300°C for 3 minutes, then pyrolyzed at 500°C for 3 minutes, and...

Embodiment 3

[0039] (1) Weigh Pb(CH 3 COO) 2 ·3H 2 O, Mg with 5% excess Mg (OC 2 h 5 ) 2 and C 10 h 25 o 5 Nb was dissolved in a mixed liquid composed of glacial acetic acid and deionized water at 110°C to form the first liquid, and then Pb (CH 3 COO) 2 ·3H 2 O, N 3 o 9 Sc H 2 O and C 10 h 25 o 5 Nb was dissolved in glacial acetic acid and CH at room temperature 3 COCH 2 COCH 3 The second liquid is formed in the mixed liquid, and finally the previous first liquid and the second liquid are mixed again at 120 ° C for 40 min, and left for 25 h to obtain a concentration of 0.25M 0.5Pb (Mg 0.5 Nb 0.5 )O 3 -0.5Pb(Sc 0.5 Nb 0.5 )O 3 Precursor solution;

[0040] (2) Spin-coat the PMN-PSN precursor solution obtained in step (1) for 20s at a speed of 600rpm using a homogenizer, and then spin-coat at a speed of 5000rpm for 40s on the Pt(111) substrate to obtain a wet film;

[0041] (3) The wet film prepared in step (2) was first dried at 350°C for 4 minutes, then pyrolyzed at...

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Abstract

The invention relates to a preparation method of a PMN-PSN ultra-high breakdown electric field thin film material, and belongs to the technical field of chemical engineering. The preparation method ofthe PMN-PSN ultra-high breakdown electric field thin film material comprises the steps: spin-coating a PMN-PSN precursor solution on a substrate to prepare a wet film, drying, and pyrolyzing to prepare a single-layer PMN-PSN thin film; repeating the steps to prepare a multi-layer PMN-PSN thin film, and annealing the obtained product to obtain the required thin film material. The preparation method has the beneficial effects that the thin film with the advantages of high purity, good compactness, small average grain size, ultrahigh electric field breakdown strength and the like is obtained; the preparation method is relatively simple, the structure and performance of the thin film can be controlled through different crystallization modes and different annealing durations, and the preparation method is a convenient and rapid preparation technology.

Description

technical field [0001] The invention relates to a preparation method of a PMN-PSN ultra-high breakdown electric field film material, belonging to the technical field of chemical engineering. Background technique [0002] With the progress of the times, electronic technology, information technology and control technology have developed rapidly, that is, they are constantly developing towards miniaturization and high integration, and the high-tech field requires rapid refrigeration and high energy storage density and high efficiency. , There are more and more studies based on ferroelectric / antiferroelectric thin / thick films. Electric card refrigeration has seen little progress in the past for a long time, because only small ΔT and ΔS can be observed, which is due to the limitation of low dielectric breakdown strength in bulk ceramics; traditional bulk ceramics Due to the influence of the microstructure and properties of the phase material itself, it is difficult for the mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/497C04B35/50C04B35/622
CPCC04B35/497C04B35/50C04B35/62218C04B2235/3206C04B2235/3251C04B2235/3296C04B2235/3224C04B2235/602C04B2235/606C04B2235/656C04B2235/6567C04B2235/663
Inventor 彭彪林陆秋萍
Owner GUANGXI UNIV