Unlock instant, AI-driven research and patent intelligence for your innovation.

Ultra-pure copper target material and grain control method thereof

A control method and ultra-high technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as difficult application of integrated circuit process, achieve wide applicability, stable sputtering process, sputtering The effect of uniform film thickness

Active Publication Date: 2020-12-11
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF8 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This processing method can only control the grain size of the target below 30 μm, which meets the requirements of the integrated circuit 45nm process, but it is difficult to apply to a more refined integrated circuit process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] This embodiment provides a grain control method for an ultra-high-purity copper target, and the grain control method includes the following steps:

[0060] (1) Hot forging is performed on an ultra-high-purity copper product with a purity of 6N. The temperature of the hot forging is 850° C., and the heating rate is 10° C. / min. The thickness of the high-purity copper product is 45% of the thickness before hot forging, and the temperature of the crystallization heat treatment is 250°C for 30 minutes, and then the temperature is cooled to room temperature by water cooling for 20 minutes;

[0061] (2) Perform cold forging on the copper parts processed in step (1), the initial temperature of the cold forging treatment is 25°C, and the end point temperature is 70°C, and the end point of the cold forging treatment is super high temperature after cold forging The thickness of the pure copper product is 55% of the thickness before cold forging, and then crystallization heat treat...

Embodiment 2

[0064] This embodiment provides a grain control method for an ultra-high-purity copper target, and the grain control method includes the following steps:

[0065] (1) Hot forging is performed on ultra-high-purity copper parts with a purity of 6N. The temperature of the hot forging is 900° C., and the heating rate is 15° C. / min. The thickness of the high-purity copper part is 40% of the thickness before hot forging, and the temperature of the crystallization heat treatment is 300°C for 20 minutes, and then the temperature is cooled to room temperature by water cooling for 25 minutes;

[0066] (2) Carry out cold forging treatment to the copper parts processed in step (1), the initial temperature of the cold forging treatment is 20°C, and the end point temperature is 60°C, and the end point of the cold forging treatment is ultra-high purity after cold forging The thickness of the copper product is 60% of the thickness before cold forging, and then crystallization heat treatment i...

Embodiment 3

[0069] This embodiment provides a grain control method for an ultra-high-purity copper target, and the grain control method includes the following steps:

[0070] (1) The ultra-high-purity copper parts with a purity of 6N5 are subjected to hot forging treatment, the temperature of the hot forging treatment is 800 ° C, the heating rate is 15 ° C / min, and the end point of the hot forging treatment is super high temperature after hot forging. The thickness of the high-purity copper product is 50% of the thickness before hot forging, and the temperature of the crystallization heat treatment is 200°C for 40 minutes, and then the temperature is cooled to room temperature by water cooling for 15 minutes;

[0071] (2) Carry out cold forging treatment to the copper parts processed in step (1), the initial temperature of the cold forging treatment is 30°C, and the end point temperature is 80°C, and the end point of the cold forging treatment is ultra-high purity after cold forging The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
purityaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ultra-pure copper target material and a grain control method thereof. The grain control method comprises the following steps that hot forging treatment is carried out on anultra-pure copper workpiece, cooling is carried out, and then crystallization heat treatment is carried out; and cold forging treatment is carried out on the treated copper workpiece, then crystallization heat treatment is carried out again, and rolling is carried out to obtain the ultra-pure copper target material. According to the grain control method, a treatment process combining hot forging and cold forging is adopted, recrystallization is conducted after two times of forging, the grain size and grain orientation of the ultra-pure copper target can be effectively controlled, the ultra-pure copper target can meet the sputter coating requirement of an integrated circuit below 14 nm process nodes, and it is guaranteed that the sputter process is stable and the sputter film thickness is uniform; and the method is simple and convenient in process operation, free of complex process conditions, relatively low in preparation cost and wide in applicability.

Description

technical field [0001] The invention belongs to the technical field of target material preparation, and relates to an ultra-high-purity copper target material and a grain control method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology and VLSI, the integration of integrated circuit chips is getting higher and higher, and the application of multilayer metal interconnection technology is becoming more and more extensive. At present, the size of semiconductor chips has been reduced to the nanometer level. At this time, the resistance-capacitance delay and electromigration of metal interconnection lines have become the main factors affecting chip performance, while traditional aluminum and aluminum alloy interconnection lines can no longer meet ultra-large-scale integration. To meet the needs of circuit technology, it is necessary to choose materials with higher electromigration resistance and conductivity to reduce the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C22F1/08
CPCC23C14/3414C23C14/3407C23C14/14C22F1/08
Inventor 姚力军边逸军潘杰王学泽慕二龙曹欢欢
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD