Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoelectric detector based on ferroelectric semiconductor and thin-layer two-dimensional material

A technology of photodetectors and two-dimensional materials, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of no photodetectors, etc., and achieve the effects of improving photoelectric responsivity, increasing spectral bandwidth, and simple structure

Inactive Publication Date: 2020-12-11
XI AN JIAOTONG UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] A photodetector device that combines ferroelectric materials with two-dimensional materials can realize the expansion of the detection spectral range, and at the same time use the polarization of the ferroelectric layer to realize the regulation of the device, thereby improving the responsivity and gain of the photodetector device. However, the existing technology Similar photodetectors do not appear in

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric detector based on ferroelectric semiconductor and thin-layer two-dimensional material
  • Photoelectric detector based on ferroelectric semiconductor and thin-layer two-dimensional material
  • Photoelectric detector based on ferroelectric semiconductor and thin-layer two-dimensional material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention is described in further detail below in conjunction with accompanying drawing:

[0022] refer to figure 1 The photodetector based on ferroelectric semiconductor and thin-layer two-dimensional material according to the present invention comprises a doped silicon substrate 1, a dielectric layer 2, a two-dimensional material thin film layer 4, and an alpha-indium selenide two-dimensional ferroelectric semiconductor layer 3 and two metal electrodes 5, wherein the doped silicon substrate 1, dielectric layer 2, two-dimensional material film layer 4 and α-indium selenide two-dimensional ferroelectric semiconductor layer 3 are distributed sequentially from bottom to top, and one metal electrode 5 is located on the α-indium selenide two-dimensional ferroelectric semiconductor layer 3 , and another metal electrode 5 is located on the hafnium dioxide dielectric layer 2 .

[0023] The thickness of the dielectric layer 2 is 10-15nm; the thickness of the α-indi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a photoelectric detector based on a ferroelectric semiconductor and a thin-layer two-dimensional material, and the photoelectric detector comprises a doped silicon substrate, adielectric layer, a two-dimensional material film layer, an alpha indium selenide two-dimensional ferroelectric semiconductor layer, and two metal electrodes. The doped silicon substrate, the dielectric layer, the two-dimensional material film layer and the alpha indium selenide two-dimensional ferroelectric semiconductor layer are sequentially distributed from bottom to top, one metal electrodeis located on the alpha indium selenide two-dimensional ferroelectric semiconductor layer, the other metal electrode is located on the hafnium oxide dielectric layer, and the detector can expand the response spectrum bandwidth and improve the responsivity.

Description

technical field [0001] The invention relates to a photodetector of a two-dimensional material, in particular to a photodetector based on a ferroelectric semiconductor and a thin-layer two-dimensional material. Background technique [0002] Since graphene was obtained by mechanical exfoliation, graphene has received extensive attention and research in many fields due to its superior structural, optical, and optoelectronic properties. With the in-depth study of graphene, scientists have discovered many two-dimensional materials with similar structures, including hexagonal boron nitride similar to graphene, graphene oxide, etc., in addition to transition metal chalcogenides and other two-dimensional oxide materials Wait. Two-dimensional materials represented by graphene have good photoelectric response characteristics, can achieve wide spectral response and improve response sensitivity. [0003] Ferroelectric materials, as a class of materials with polarization characteristic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/101H01L31/0216H01L31/0352H01L31/0392
CPCH01L31/02161H01L31/035272H01L31/0392H01L31/101
Inventor 牛刚孙延笑赵金燕史鹏任巍
Owner XI AN JIAOTONG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com