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Preparation method and application of two-dimensional black arsenic-phosphorus nano material

A black arsenic phosphorus nanometer and nanomaterial technology, which is applied to the preparation of two-dimensional black arsenic phosphorus nanomaterials and the application field of laser preparation, can solve the problems of complex equipment, high energy consumption, complicated procedures, etc., and achieves high stability, The effect of obvious nonlinear saturable absorption intensity and high light damage threshold

Inactive Publication Date: 2020-12-18
SHENZHEN UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, the present invention provides a method for preparing a two-dimensional black arsenic and phosphorus nanomaterial, and the present invention also provides an application of a method for preparing a two-dimensional black arsenic and phosphorus nanomaterial in the preparation of near-infrared devices or mid-infrared devices , in order to solve the problems existing in the preparation method of two-dimensional black arsenic and phosphorus nanomaterials such as complicated process, high energy consumption, complicated equipment and low output

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  • Preparation method and application of two-dimensional black arsenic-phosphorus nano material
  • Preparation method and application of two-dimensional black arsenic-phosphorus nano material
  • Preparation method and application of two-dimensional black arsenic-phosphorus nano material

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preparation example Construction

[0028] The invention provides a method for preparing a two-dimensional black arsenic and phosphorus nanomaterial, comprising the following steps:

[0029] Preparation of b-AsP crystals: Provide gray arsenic, red phosphorus and mineralizers and place them in a sealed vacuum quartz tube, first raise the temperature of the vacuum quartz tube to 735-765 °C and maintain it for 1.5-2.5 hours, and then within 10 hours the vacuum Cool the quartz tube to 480-520°C and maintain it for 2-4 hours, further cool the vacuum quartz tube to 120-180°C within 10 hours, and finally cool to room temperature to obtain b-AsP crystal;

[0030] Preparation of two-dimensional b-AsP nanomaterials: dissolving the b-AsP crystals in the dispersion liquid and performing probe ultrasound and water bath ultrasound in sequence to prepare two-dimensional b-AsP nanomaterials;

[0031] The molar ratio of the gray arsenic to the red phosphorus is 1-90:10-99, and the ratio of the mass sum of the gray arsenic and re...

Embodiment 1

[0044] Such as figure 1 Shown, a kind of preparation method of two-dimensional black arsenic phosphorus nanomaterial comprises the following steps:

[0045] Preparation of b-AsP crystal: provide 50mg of gray arsenic, 450mg of red phosphorus and 10mg of tin iodide and place them in a sealed vacuum quartz tube, and then place the vacuum quartz tube horizontally in the furnace. First raise the temperature of the vacuum quartz tube to 750 °C at a speed of 5 °C / min and maintain it at this temperature for 2 hours, then cool the vacuum quartz tube to 500 °C within 7.5 hours and maintain it at this temperature for 3 hours, and then within 8 hours. The vacuum quartz tube was cooled to 150°C, and finally gradually cooled to room temperature to obtain b-AsP crystals.

[0046] Preparation of two-dimensional b-AsP nanomaterials: grind b-AsP crystals for 10 min to form powdered b-AsP, then dissolve the ground powdered b-AsP in deionized water to obtain b-AsP dispersion, and mix b-AsP The ...

Embodiment 2

[0051] A saturable absorber based on two-dimensional b-AsP, the specific preparation process includes: using a common single-mode fiber (dispersion 18ps / (nm*km)) to obtain a tapered fiber through a mechanical tapered machine, and then connecting a 980nm The pump laser produces an evanescent field in the tapered region. Then, the dispersion liquid containing the two-dimensional b-AsP nanomaterial obtained in Example 1 was dropped into the tapered region of the optical fiber, and dried to form a saturable absorber based on two-dimensional b-AsP.

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Abstract

The invention provides a preparation method of a two-dimensional black arsenic-phosphorus nano material, which comprises the following steps: preparing a bAsP crystal: providing ash arsenic, red phosphorus and a mineralizing agent, putting the components into a sealed vacuum quartz tube, heating the vacuum quartz tube to 735-765 DEG C, keeping the temperature for 1.5-2.5 hours, cooling the vacuumquartz tube to 480-520 DEG C within 10 hours, and keeping the status for 2-4 hours, and further cooling the vacuum quartz tube to 120-180 DEG C within 10 hours, and finally cooling the quartz tube toroom temperature to obtain the b-AsP crystal; preparation of the two-dimensional b-AsP nano material: dissolving the b-AsP crystal in a dispersion liquid, and sequentially carrying out probe ultrasonic treatment and water bath ultrasonic treatment to obtain the two-dimensional bAsP nano material. The preparation method of the two-dimensional black arsenic-phosphorus nano material has the advantages of simple process, simple equipment, high yield and the like. The invention also provides application of the preparation method of the two-dimensional black arsenic-phosphorus nano material.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a preparation method of a two-dimensional black arsenic and phosphorus nanometer material, and also relates to the application of the preparation method of the two-dimensional black arsenic and phosphorus nanometer material in the preparation of lasers. Background technique [0002] The two-dimensional black arsenic-phosphorus nanomaterial (b-AsP) is a new type of two-dimensional binary material based on the V group, which has a wide tunable bandgap, strong conductivity and high carrier mobility, and is a kind of Promising electronic and optoelectronic materials. In addition, on the basis of previous studies, it was found that b-AsP, as a nonlinear optical material, also has certain advantages in the application of photonic devices. For example, the band gap of b-AsP can be fully tuned in the range of 0.15 eV to 0.3 eV (corresponding to the wavelength of 8.27 μm to 4.13 μm), whic...

Claims

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Application Information

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IPC IPC(8): C01B25/08H01S3/16B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B25/08C01P2004/03C01P2004/04C01P2004/20C01P2004/64H01S3/1666
Inventor 张晗舒怡青张家宜
Owner SHENZHEN UNIV
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