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37results about How to "High photodamage threshold" patented technology

Three-dimensional measurement method for high-power laser body damage of KDP (Potassium Dihydrogen Phosphate) crystal

The invention relates to a three-dimensional measurement method for high-power laser body damage of a KDP (Potassium Dihydrogen Phosphate) crystal. The method substantially comprises the following steps of placing the KDP crystal to be measured into a detection optical path of a digital hologram interferometric device, and detecting a phase distribution outline of body damage in the crystal, i.e. a two-dimensional phase distribution image; carrying out angle scanning on the crystal to be measured, carrying out Fourier transform on the two-dimensional phase distribution image obtained from each angle sampling point, and constructing a three-dimensional phase distribution appearance of the body damage through the Fourier transform. The three-dimensional fine structure of the body damage can be utilized as an important parameter for qualitatively describing laser damage characteristics, and become a key environment correlated with laser damage macroscopic characteristics and micromechanisms and has important application to exploration of a KDP/DKDP (Deuterated Potassium Dihydrogen Phosphate) crystal laser damage mechanism and improvement of a laser damage threshold.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI

Preparation method and application of two-dimensional black arsenic-phosphorus nano material

InactiveCN112093784AApparently nonlinear saturated absorption intensityHigh photodamage thresholdMaterial nanotechnologyActive medium materialArsenicPhosphorus
The invention provides a preparation method of a two-dimensional black arsenic-phosphorus nano material, which comprises the following steps: preparing a bAsP crystal: providing ash arsenic, red phosphorus and a mineralizing agent, putting the components into a sealed vacuum quartz tube, heating the vacuum quartz tube to 735-765 DEG C, keeping the temperature for 1.5-2.5 hours, cooling the vacuumquartz tube to 480-520 DEG C within 10 hours, and keeping the status for 2-4 hours, and further cooling the vacuum quartz tube to 120-180 DEG C within 10 hours, and finally cooling the quartz tube toroom temperature to obtain the b-AsP crystal; preparation of the two-dimensional b-AsP nano material: dissolving the b-AsP crystal in a dispersion liquid, and sequentially carrying out probe ultrasonic treatment and water bath ultrasonic treatment to obtain the two-dimensional bAsP nano material. The preparation method of the two-dimensional black arsenic-phosphorus nano material has the advantages of simple process, simple equipment, high yield and the like. The invention also provides application of the preparation method of the two-dimensional black arsenic-phosphorus nano material.
Owner:SHENZHEN UNIV

Novel lithium niobate optical waveguide wafer and preparation method thereof

The invention discloses a novel lithium niobate optical waveguide wafer. The novel lithium niobate optical waveguide wafer comprises a lithium niobate wafer and an optical waveguide, wherein the lithium niobate wafer is an optical-level wafer, and the crystal orientation is one of X-cutting Y-transmission or Z-cutting Y-transmission or X-cutting Z-transmission or Y-cutting Z-transmission; and theoptical waveguide is a zinc oxide diffusion lithium niobate optical waveguide. In addition, the invention also provides a preparation method of the two lithium niobate optical waveguide wafers. The zinc oxide diffusion lithium niobate optical waveguide provided by the invention has the following advantages that (1) the two polarization modes of TE and TM can be simultaneously transmitted, a lightdamage threshold value higher than that of the titanium diffusion optical waveguide is achieved, and the wafer is more suitable for being applied to a light transmission system requiring relatively high optical power transmission; (2) the relatively high light damage threshold value is achieved, the two polarization modes can be transmitted at the same time, and a phenomenon that one of the polarization modes is filtered is avoided; and (3) the preparation process is simple, the rate of finished products is high, the cost is low, and the wafer is more suitable for batch production.
Owner:天津领芯科技发展有限公司

Poling method for relaxor ferroelectric single crystal as nonlinear optical material

The invention discloses a poling method for a relaxor ferroelectric single crystal as a nonlinear optical material. The method comprises an annealing process and a polarization process; the relaxor ferroelectric single crystal comprises a binary (1-x)Pb(Mg1 / 3Nb2 / 3)O(3-x)PbTiO3 system and a ternary (1-x-y)Pb(In1 / 2Nb1 / 2)O(3-x)Pb(Mg1 / 3Nb2 / 3)O(3-y)PbTiO3 system; according to the annealing process, the relaxor ferroelectric single crystal after grinding and polishing is subjected to annealing treatment in atmosphere, stress caused by machining is removed, and spontaneous strain produced in a ferroelectric phase forming process is released to the great degree through quite slow cooling, so that the probability of cracking caused by electrically induced domain rotation in the crystal poling process is reduced. Besides, after an electric field is removed, a remaining depolarization field can be induced to form a nanometer domain structure. In order to guarantee formation and stability of a single-domain structure, the remaining depolarization field can be compensated by bulk shielding effect formed through electrode injection, the relaxor ferroelectric single crystal with high poling performance and stable performance is obtained, and the material has the characteristics of small half-wave voltage, large photo damage threshold, large electro-optic coefficient and the like and is far better than BBO, KTP, LN and other materials.
Owner:XI AN JIAOTONG UNIV

Concave axicon capable of producing long distance non-diffraction beams

The invention discloses a concave axicon capable of producing long distance non-diffraction beams. The concave axicon capable of producing long distance non-diffraction beams is provided with an axicon, wherein a cone angle of the axicon is gamma, an undersurface radius of the axicon is a, and an refractive index of the axicon is n. The axicon is divided into a cylinder part and a circular cone part along an axis direction, one end in which the cylinder part and the circular cone part are adjacent is the inside, the other end is the outside, and the outside undersurface of the cylinder part is in a concave spherical surface shape, wherein a center of the concave spherical surface shape is the axis of the axicon, and a curvature radius of the concave spherical surface shape is R. The long distance non-diffraction beams can be achieved through a single element, the problems that a cone angle of a traditional axicon is small and processing is hard are overcome, the concave axicon capable of producing the long distance non-diffraction beams has the advantages of being easy in element processing, simple in structure, high in transfer efficiency, and high in optical damage threshold value, a concise and effective new way is provided for acquiring the long distance non-diffraction beams, and in addition, non-diffraction distance of the non-diffraction beams can be adjusted through adjusting radii of incident beams and a size of the curvature radius of the undersurface of the concave axicon.
Owner:HUAQIAO UNIVERSITY

Terbium-containing borate compound, polycrystalline compound thereof, optical crystal, and preparation method and application of optical crystal

The invention discloses a terbium-containing borate compound. The chemical formula of the terbium-containing borate compound is Rb2LiTbB2O6. The invention also discloses a polycrystalline compound ofthe terbium-containing borate compound, an optical crystal, and a preparation method and application of the optical crystal. The polycrystalline compound can be used as a fluorescent powder matrix, and the optical crystal can be used as a magneto-optical crystal. The terbium-containing borate compound is simple in synthesis and low in cost, grows easily, and has important economic value and scientific research value in the field of solid-state illumination and magneto-optical materials.
Owner:DEZHOU UNIV

Three-dimensional measurement method for high-power laser body damage of KDP (Potassium Dihydrogen Phosphate) crystal

The invention relates to a three-dimensional measurement method for high-power laser body damage of a KDP (Potassium Dihydrogen Phosphate) crystal. The method substantially comprises the following steps of placing the KDP crystal to be measured into a detection optical path of a digital hologram interferometric device, and detecting a phase distribution outline of body damage in the crystal, i.e.a two-dimensional phase distribution image; carrying out angle scanning on the crystal to be measured, carrying out Fourier transform on the two-dimensional phase distribution image obtained from each angle sampling point, and constructing a three-dimensional phase distribution appearance of the body damage through the Fourier transform. The three-dimensional fine structure of the body damage canbe utilized as an important parameter for qualitatively describing laser damage characteristics, and become a key environment correlated with laser damage macroscopic characteristics and micromechanisms and has important application to exploration of a KDP / DKDP (Deuterated Potassium Dihydrogen Phosphate) crystal laser damage mechanism and improvement of a laser damage threshold.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI

Broadband strong field terahertz source based on silicon carbide single crystal

The invention discloses a broadband strong-field terahertz source based on a silicon carbide single crystal. The broadband strong-field terahertz source comprises a femtosecond pulse laser source, a wavefront tilting system, a silicon carbide wafer and a coupling output end. The femtosecond pulse laser source part comprises a femtosecond laser and a plane mirror, the wavefront inclination system part comprises a reflection grating, a half-wave plate and a telescope imaging lens group, femtosecond laser is normally incident to a silicon carbide wafer after passing through a wavefront inclination system, terahertz pulse radiation is generated in the wafer in a light rectification mode, and the terahertz pulse radiation is transmitted to the femtosecond laser; terahertz pulse radiation is coupled and output through the triangular prism silicon prism at the coupling output end. Wherein the thickness of the silicon carbide wafer is 0.5-6 mm, the wavefront inclination angle of pulses in the wafer is 31.5-38 degrees, three cylindrical surfaces of the triangular prism silicon prism are subjected to optical polishing treatment, the cutting angle of the terahertz output surface of the triangular prism silicon prism is 31-32 degrees, and the input surface of the triangular prism silicon prism completely covers and is attached to the output surface of the silicon carbide wafer through an optical contact method.
Owner:TIANJIN UNIV

Optical Parametric Oscillator Laser Based on Wide Bandgap Semiconductor Silicon Carbide Crystal

The invention relates to an optical parametric oscillation laser based on wide-band-gap semiconductor silicon carbide crystals. The optical parametric oscillation laser sequentially comprises an excitation source, an input mirror, the semiconductor SiC crystals and an output mirror. The semiconductor SiC crystals are cut in the phase position matching direction of optical parametric oscillation of the semiconductor SiC crystals, medium membranes which allow much excitation light, much signal frequency light and much idler frequency light to penetrate through are plated on light-permeable faces respectively, the excitation source is an all-solid-state pulsed laser, medium membranes which allow much excitation light to penetrate through and allow much frequency light and much idler frequency light to be reflected are plated on the two light-permeable faces of the input mirror respectively, and a medium membrane which allows much frequency light to be reflected and allows idler frequency light to partially penetrate through is plated on the input mirror. The wide-band-gap semiconductor silicon carbide crystals are used as a non-linear optical medium, therefore, the optical parametric oscillation laser ranging from 1.28 micrometers to 6 micrometers are output, the output energy is high, the structure is simple, and the penetrating range is continuous and adjustable.
Owner:SHANDONG UNIV
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