Broadband strong field terahertz source based on silicon carbide single crystal
A silicon carbide single crystal, terahertz technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of inability to use high power density light source pumping conversion efficiency, low light damage threshold, difficult growth process and other problems , to achieve the effects of excellent phase matching characteristics, high optical damage threshold, and small wavefront tilt angle
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[0029] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, and are not intended to limit the present invention
[0030] Such as figure 1 As shown, the femtosecond laser 1 emits a central wavelength λ 0 Femtosecond pulsed laser with a pulse width of 800nm, a pulse width of 30-200fs, and a linearly polarized state. The pulsed laser is reflected by the plane mirror 2 and then enters the center of the reflection grating 3; after diffraction, the pulse wavefront is inclined , and propagate along the optical axis of the system; then, the polarization state of the pulsed laser is regulated by rotating the half-wave plate 4; then, the pulsed laser is incident on the telescope imaging lens group 5, and the focal lengths of the two convex lenses are f 1 = 150mm, f 2 =50mm, the distance ...
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