Preparation method of silica-base broadband saturable absorber device

A silica-based, saturable absorption technology, applied in the field of optics, can solve the problems of poor work stability and low optical damage threshold, and achieve the effect of low cost, simple principle, and improved optical damage threshold

Inactive Publication Date: 2018-07-10
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve the problems of poor working stability and low optical damage threshold of broadband saturable absorbers in the prior art, the present invention provides a method for preparing silica-based broadband saturable absorber devices with high damage threshold by sol-gel method The method, used in the evanescent wave mode-locked fiber laser, can realize long-term stable operation of the broadband absorber and high-power laser output

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A method for preparing a silicon dioxide-based broadband saturable absorption device, comprising the following steps:

[0028] Step 1: Prepare a dispersion: mix 9.3 g of tetraethyl orthosilicate, 8.3 g of ethanol, 135 mg of carbon nanotubes and 6.5 mL of N,N-dimethylacetamide to prepare a dispersion;

[0029] Step 2: Preparation of broadband saturable absorber sol: ultrasonically oscillate the dispersion in step 1 for 15 min to make it evenly mixed, then add 3.2 g of water, then adjust the pH value to 2-3 with hydrofluoric acid, and continue to oscillate for 40 min until tetraethyl orthosilicate is fully hydrolyzed and polycondensed to obtain a broadband saturable absorber sol;

[0030] Step 3: Preparation of broadband saturable absorber device: drip-coat the broadband saturable absorber sol prepared in step 2 on the D-shaped area of ​​the polished D-shaped optical fiber, put it into a covered organic plastic petri dish, and leave it at room temperature After 4 days, u...

Embodiment 2

[0032] A method for preparing a silicon dioxide-based broadband saturable absorption device, comprising the following steps:

[0033] Step 1: Prepare a dispersion: mix 9 g of tetraethyl orthosilicate, 8 g of ethanol, 150 mg of graphene and 6 mL of N,N-dimethylacetamide to prepare a dispersion;

[0034] Step 2: Prepare broadband saturable absorber sol: ultrasonically oscillate the dispersion in step 1 for 20 min, mix it evenly, add 3 g of water, adjust the pH value to 2-3 with hydrofluoric acid, and continue ultrasonic oscillation for 60 min min until tetraethyl orthosilicate is fully hydrolyzed and polycondensed to obtain a broadband saturable absorber sol;

[0035] Step 3: Preparation of broadband saturable absorber device: drip-coat the broadband saturable absorber sol prepared in step 2 on the D-shaped area of ​​the polished D-shaped optical fiber, put it into a covered organic plastic petri dish, and leave it at room temperature After 5 days, until the broadband saturable...

Embodiment 3

[0037] A method for preparing a silicon dioxide-based broadband saturable absorption device, comprising the following steps:

[0038] Step 1: Prepare a dispersion: mix 10 g of tetraethyl orthosilicate, 9 g of ethanol, 115 mg of bismuth telluride (a type of topological body) and 7 mL of N,N-dimethylacetamide to make a dispersion;

[0039] Step 2: Preparation of broadband saturable absorber sol: ultrasonically oscillate the dispersion in step 1 for 5 min to make it evenly mixed, then add 4 g of water, then adjust the pH value to 2-3 with hydrofluoric acid, and continue to oscillate for 60 min until tetraethyl orthosilicate is fully hydrolyzed and polycondensed to obtain a broadband saturable absorber sol;

[0040] Step 3: Preparation of broadband saturable absorber device: drip-coat the broadband saturable absorber sol prepared in step 2 on the D-shaped area of ​​the polished D-shaped optical fiber, put it into a covered organic plastic petri dish, and leave it at room temperatu...

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Abstract

The invention belongs to the field of optics and concretely relates to a preparation method of a silica-base broadband saturable absorber device. The preparation method mainly includes the following steps: firstly, preparing broadband saturable absorber sol, and secondly, dispensing the prepared broadband saturable absorber sol in a D type zone of a D type fiber, and then obtaining a broadband saturable absorber device after the sol stands to become gel. A sol-gel method is adopted to prepare broadband saturable absorbers, and the absorbers are uniformly distributed in silica sol to effectively isolate the air and form a great protection substrate, so oxidation is prevented, a light injury threshold is increased, and the use stability is improved. The broadband saturable absorbers can be used for an all-fiber evanescent wave mode locked fiber laser and can greatly reduce insertion loss, so unsaturated loss of the broadband saturable absorber device is reduced. The prepared broadband saturable absorbers are convenient to use and convenient for industrial popularization.

Description

technical field [0001] The invention belongs to the field of optics, and in particular relates to a preparation method of a silicon dioxide-based broadband saturable absorption device. Background technique [0002] Ultrashort pulse high-end laser technologies represented by picoseconds and femtoseconds have broad application prospects in the fields of national security, national defense construction, high-tech industrialization, and technological frontiers. [0003] With the invention and maturity of semiconductor saturable absorber mirror (SESAM), ultrashort pulse laser technology has entered a new stage. Various types of SESAMs are marketed as absorber mode-locked lasers. As a traditional stable saturable absorber, SESAM, as a passive mode-locked absorber, can generate both femtosecond laser and picosecond laser, so that ultrashort pulses can learn from each other in industrial applications and have their own uses. [0004] However, SESAM can only be used as a discrete d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098
CPCH01S3/1118
Inventor 王勇刚李璐
Owner SHAANXI NORMAL UNIV
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