Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Poling method for relaxor ferroelectric single crystal as nonlinear optical material

A technology of relaxor ferroelectric single crystal and nonlinear optics, which is applied in the fields of optical information processing and optical communication, can solve the problems of easy cracking of crystals and difficulty in obtaining large sizes, and achieve large electro-optic coefficients, highly monodomain optical properties, and optical properties strong folding effect

Active Publication Date: 2017-11-07
XI AN JIAOTONG UNIV
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are two problems in the monodomain process of relaxor ferroelectric crystals. One is that the huge strain generated by the electro-induced domain switching is difficult to release in a short time and the crystal is easy to crack. The other is that after the electric field is removed, the remaining depolarization The chemical field will induce self-assembled nano-domain structure, and it is difficult to obtain PMNT system and PIMNT system single crystal with large size, high degree of monodomain and stable performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Poling method for relaxor ferroelectric single crystal as nonlinear optical material
  • Poling method for relaxor ferroelectric single crystal as nonlinear optical material
  • Poling method for relaxor ferroelectric single crystal as nonlinear optical material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Crystal processing

[0047] (a) The [111] oriented trigonal phase PMNT system relaxor ferroelectric single crystal selects a crack-free, well-crystallized region, three-dimensionally oriented, and cuts into the shape required for the experiment 6*2*6 mm (L*T *H), grinding and polishing plane 1 and its parallel planes, such as figure 1 (a) shown. Grind lightly with sandpaper until there are no obvious scratches, and then polish it on a polishing machine until it is close to an optical plane (flatness is less than 1 μm) to obtain the sample required for the experiment.

[0048] (2) Annealing process

[0049] (a) Annealing the relaxed ferroelectric single crystal of the trigonal phase PMNT system with the [111] crystal orientation described in (1-a) to eliminate the stress generated during growth, cutting, polishing and ferroelectric phase formation . The crystal was placed in an atmosphere furnace, and the temperature was raised to 800° C. at a rate of 4° C. per m...

Embodiment 2

[0058] (1) Crystal processing

[0059] (a) The [110] oriented orthorhombic phase PIMNT system relaxor ferroelectric single crystal selects a crack-free and well-crystallized region, three-dimensionally oriented, and cuts into the shape required for the experiment 4*1*3 mm (L* T*H), grind and polish plane 1 and its parallel planes, such as figure 1 (a) shown. Grind lightly with sandpaper until there are no obvious scratches, and then polish it on a polishing machine until it is close to an optical plane (flatness is less than 1 μm) to obtain the sample required for the experiment.

[0060] (2) Annealing process

[0061] (a) Anneal the relaxation ferroelectric single crystal of the orthorhombic phase PIMNT system with the [110] crystal orientation described in (1-a), to eliminate the generated during growth, cutting, polishing and ferroelectric phase formation stress. The crystal was placed in an atmosphere furnace, and the temperature was raised to 500°C at a rate of 0.2°C ...

Embodiment 3

[0070] (1) Crystal processing

[0071] (a) Select a crack-free and well-crystallized region of the relaxation ferroelectric single crystal of the tetragonal PIMNT system with the [001] crystal orientation, and cut it into the shape required for the experiment 2*1*2 mm (L*T *H), grinding and polishing plane 1 and its parallel planes, such as figure 1 (a) shown. Grind lightly with sandpaper until there are no obvious scratches, and then polish it on a polishing machine until it is close to an optical plane (flatness is less than 1 μm) to obtain the sample required for the experiment.

[0072] (2) Annealing process

[0073] (a) Annealing the relaxed ferroelectric single crystal of tetragonal phase PIMNT system with the [001] crystal orientation described in (1-a) to eliminate the stress generated during growth, cutting, polishing and ferroelectric phase formation . The crystal was placed in an atmosphere furnace, the temperature was raised to 750°C at a rate of 1°C / min, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electro-optic coefficientaaaaaaaaaa
Login to View More

Abstract

The invention discloses a poling method for a relaxor ferroelectric single crystal as a nonlinear optical material. The method comprises an annealing process and a polarization process; the relaxor ferroelectric single crystal comprises a binary (1-x)Pb(Mg1 / 3Nb2 / 3)O(3-x)PbTiO3 system and a ternary (1-x-y)Pb(In1 / 2Nb1 / 2)O(3-x)Pb(Mg1 / 3Nb2 / 3)O(3-y)PbTiO3 system; according to the annealing process, the relaxor ferroelectric single crystal after grinding and polishing is subjected to annealing treatment in atmosphere, stress caused by machining is removed, and spontaneous strain produced in a ferroelectric phase forming process is released to the great degree through quite slow cooling, so that the probability of cracking caused by electrically induced domain rotation in the crystal poling process is reduced. Besides, after an electric field is removed, a remaining depolarization field can be induced to form a nanometer domain structure. In order to guarantee formation and stability of a single-domain structure, the remaining depolarization field can be compensated by bulk shielding effect formed through electrode injection, the relaxor ferroelectric single crystal with high poling performance and stable performance is obtained, and the material has the characteristics of small half-wave voltage, large photo damage threshold, large electro-optic coefficient and the like and is far better than BBO, KTP, LN and other materials.

Description

technical field [0001] The invention belongs to the technical field of optical information processing and optical communication, and in particular relates to a nonlinear optical functional material, in particular to a method for single domaining a relaxation ferroelectric single crystal of a nonlinear optical material. Background technique [0002] Since the advent of the ruby ​​laser, nonlinear optics came into being. Since then, the field of nonlinear optics has attracted a large number of scientific and technological workers, making this subject achieve great development in basic theory, development of new materials, discovery and application of new effects, and has become the most active and important field in optics. One of the branches. In recent years, along with the in-depth research on nonlinear optics, more and higher performance requirements have been put forward for nonlinear optical materials. One of the hot spots that scholars pay attention to. [0003] At p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/04C30B33/02C30B29/22G02F1/355
Inventor 徐卓赵烨魏晓勇王三红庄永勇李振荣
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com