Semiconductor crystal growth device

Abstract

The invention provides a semiconductor crystal growth device. The device comprises a furnace body; a crucible which is arranged in the furnace body and is used for accommodating a silicon melt; a lifting device which is arranged at the top of the furnace body and is used for lifting a silicon crystal bar out of the silicon melt; a flow guide cylinder which is in a barrel shape and is arranged above the silicon melt in the furnace body in the vertical direction, wherein the lifting device is adopted to lift the silicon crystal bar to penetrate through the flow guide cylinder in the vertical direction; and a magnetic field applying device which is used for applying a magnetic field in the horizontal direction to the silicon melt in the crucible; wherein in the process that the lifting devicelifts the silicon crystal bar to penetrate through the flow guide cylinder, the distance between the bottom of the flow guide cylinder in the direction of the magnetic field and the silicon crystal bar is larger than the distance between the bottom of the flow guide cylinder in the direction perpendicular to the magnetic field and the silicon crystal bar. According to the semiconductor crystal growth device provided by the invention, the growth quality of the semiconductor crystal is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor crystal growth device. Background technique [0002] The Czochralski method (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material placed in the crucible is heated to melt it through a thermal field composed of carbon materials, and then the seed crystal is immersed in the In the melt and through a series of processes (seeding, shouldering, equal diameter, finishing, cooling), a single crystal rod is finally obtained. [0003] In the crystal growth of semiconductor single crystal silicon or solar single crystal silicon using the CZ method, the temperature distribution of the crystal and the melt directly affects the quality and growth rate of the crystal. During the growth of CZ crystal, due to the existence of thermal convection in the melt, the distribution of trace impur...

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Problems solved by technology

Because, in the semiconductor crystal growth process, the temperature below the cross-section of the semiconductor crystal and the melt fluctuates periodically with the change of the circumferential angle, that is, the Gc of the temperature gradient (dT / dZ) of the crystal and the melt as the interface, Gm fluctuates, therefore, the crystallization speed PS of the crystal in the circumferential angle direction fluctuates periodically, which is not conducive to the control of crystal growth quality

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