A semiconductor crystal growth device

Abstract

The invention provides a semiconductor crystal growth device. It includes: a furnace body; a crucible, which is arranged inside the furnace body, to accommodate silicon melt; a lifting device, which is arranged on the top of the furnace body, to extract silicon melt from the silicon melt Pull out the silicon crystal rod; the guide tube, the guide tube is barrel-shaped and arranged in the furnace body along the vertical direction, and the pulling device pulls the silicon crystal rod to pass through in the vertical direction through the draft tube; and a magnetic field applying device for applying a magnetic field to the silicon melt in the crucible; wherein, the bottom of the draft tube in the direction of the magnetic field is in contact with the silicon melt The distance between the liquid surfaces is smaller than the distance between the bottom of the draft tube and the silicon melt in a direction perpendicular to the magnetic field. According to the semiconductor crystal growth device of the present invention, the uniformity of temperature distribution in the silicon melt is improved, and the quality of semiconductor crystal growth is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor crystal growth device. Background technique [0002] The Czochralski method (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material placed in the crucible is heated to melt it through a thermal field composed of carbon materials, and then the seed crystal is immersed in the In the melt and through a series of processes (seeding, shouldering, equal diameter, finishing, cooling), a single crystal rod is finally obtained. [0003] In the crystal growth of semiconductor single crystal silicon or solar single crystal silicon using the CZ method, the temperature distribution of the crystal and the melt directly affects the quality and growth rate of the crystal. During the growth of CZ crystal, due to the existence of thermal convection in the melt, the distribution of trace impur...

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Problems solved by technology

Because, in the semiconductor crystal growth process, the temperature below the cross-section of the semiconductor crystal and the melt fluctuates periodically with the change of the circumferential angle, that is, the Gc of the temperature gradient (dT / dZ) of the crystal and the melt as the interface, Gm fluctuates, therefore, the crystallization speed PS of the crystal in the circumferential angle direction fluctuates periodically, which is not conducive to the control of crystal growth quality

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