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Energy distribution test method and system based on boundary trap of MIS-HEMT

A technology of MIS-HEMT and test method, applied in the field of energy distribution test system, can solve problems such as shortening test time

Active Publication Date: 2020-12-18
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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  • Description
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  • Application Information

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Problems solved by technology

[0004] Based on this, the present invention provides a method and system for testing the energy distribution of boundary traps based on MIS-HEMT to meet the requirements of the measurement range, shorten the test time, reduce the escape of fast recoverable traps, and increase the measurement accuracy.

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  • Energy distribution test method and system based on boundary trap of MIS-HEMT

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Embodiment Construction

[0042] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for th...

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Abstract

The invention relates to an energy distribution test method and system based on a boundary trap of an MIS-HEMT. The method comprises the steps that forward voltage stress is applied to a grid electrode of the MIS-HEMT for charging until charging is completed; the MISHEMT is fully discharged by a plurality of discharge processes, wherein the following steps are performed in each discharge process:reducing the forward voltage stress applied to the grid electrode of the MIS-HEMT; monitoring the discharge process of the MIS-HEMT by adopting a spot-Id sense technology, and acquiring the current ofthe MIS-HEMT; and determining a current change amount according to the current and an initial current of the MIS-HEMT, and determining a current threshold voltage drift amount of the MIS-HEMT according to the current change amount.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an energy distribution testing system based on MIS-HEMT boundary traps. Background technique [0002] The wide bandgap semiconductor material represented by GaN is a new type of semiconductor material that has developed rapidly in recent years after the first generation semiconductor material represented by silicon and the second generation semiconductor material represented by gallium arsenide (GaAs). Material. However, the technology for making power devices with GaN materials is still not mature enough to replace silicon-based power devices on a large scale. The reasons are mainly in the following two aspects: First, the general structure of the traditional GaN power device is a metal-insulator-semiconductor high electron mobility transistor (Metal-Insulator-Semiconductor High Electron Mobility Transistor, MIS-HEMT), while the traditional MIS-HEMT The devices a...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2621
Inventor 高汭贺致远陈义强林晓玲路国光
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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