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Integrated heating type germanium waveguide thermo-optical modulator structure and preparation method thereof

A light modulator and heating technology, which is applied in the direction of instruments, optics, nonlinear optics, etc., can solve the problems of reduced heating efficiency and high power consumption of devices, and achieve the effects of reduced absorption loss, compact overall design, and reduced transmission loss

Active Publication Date: 2020-12-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is characterized by adding an optical isolation layer (such as silicon nitride) between the germanium waveguide and the metal, which reduces the heating efficiency and consumes a lot of power.

Method used

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  • Integrated heating type germanium waveguide thermo-optical modulator structure and preparation method thereof
  • Integrated heating type germanium waveguide thermo-optical modulator structure and preparation method thereof
  • Integrated heating type germanium waveguide thermo-optical modulator structure and preparation method thereof

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Embodiment Construction

[0042] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0043] Such as figure 1 as shown, figure 1 It is a schematic cross-sectional view of an integrated heating type germanium waveguide thermo-optic modulator structure provided by the present invention. The thermo-optic modulator realizes the spatial separation of photon transmission and carrier transport through intrinsic germanium thin film and doped germanium thin film layer, The heating efficiency is effectively improved and the transmission loss is reduced. The thermo-optic modulator structure includes:

[0044] substrate1;

[0045] an intrinsic germanium thin film 2 located on the substrate 1;

[0046] The germanium-doped thin film layer 3 is located on the intrinsic germanium thin film 2;

[0047] Wherein, the epi...

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Abstract

The invention discloses an integrated heating type germanium waveguide thermo-optical modulator structure and a preparation method thereof. The integrated heating type germanium waveguide thermo-optical modulator structure comprises a substrate; an intrinsic germanium thin film which is positioned on the substrate; a doped germanium thin film layer which is located on the intrinsic germanium thinfilm, wherein a first germanium waveguide, an optical beam splitter, a second germanium waveguide, a third germanium waveguide, an optical beam combiner and a fourth germanium waveguide are etched onan epitaxial layer formed by the intrinsic germanium film and the doped germanium film layer. The space separation of photon transmission and carrier transmission is realized, the heating efficiency is effectively improved, and the transmission loss is reduced.

Description

technical field [0001] The invention mainly relates to the field of mid-infrared photonics, in particular to an integrated heating type germanium waveguide thermo-optic modulator structure and a preparation method thereof. Background technique [0002] The mid-infrared band has important application prospects in the fields of free-space optical communication, lidar systems, and real-time monitoring of gases in industrial production. Silicon photonics technology is compatible with complementary metal-oxide-semiconductor (CMOS) processes and is an important solution for mid-wave infrared photonic integration. Chip integration of optoelectronic devices also requires active devices such as modulators, detectors, and lasers. Among them, the optical modulator is a device with one or more selectable transmission ports, which can perform mutual conversion or logical operation on optical signals in optical transmission lines or integrated optical circuits, and is one of the importan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
CPCG02F1/0147G02F1/011
Inventor 郑军牛超群刘智左玉华薛春来成步文
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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