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High-storage-capacity nano-capacitor three-dimensional integrated structure and preparation method thereof

A nano-capacitor and storage capacity technology, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as single, increase storage capacity, etc.

Active Publication Date: 2020-12-29
FUDAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high aspect ratio structures currently used in nanocapacitors are relatively single, which cannot increase the storage capacity to a greater extent, thus limiting nanocapacitors as effective energy buffer components

Method used

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  • High-storage-capacity nano-capacitor three-dimensional integrated structure and preparation method thereof
  • High-storage-capacity nano-capacitor three-dimensional integrated structure and preparation method thereof
  • High-storage-capacity nano-capacitor three-dimensional integrated structure and preparation method thereof

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Embodiment Construction

[0033] In order to make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The embodiments are only used to explain the present invention, and are not intended to limit the present invention. The described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0034] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical", "horizontal", etc. is based on the orientat...

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Abstract

The invention discloses a high-storage-capacity nano-capacitor three-dimensional integrated structure and a preparation method thereof. A silicon nano structure is etched on the surface of a silicon wafer, a first nano capacitor is prepared, an anodic aluminum oxide structure is formed on the surface of the first nano capacitor, a second nano capacitor is prepared, and the two nano capacitors areconnected in parallel, so that the capacitance density and the energy density can be remarkably increased. In addition, the electrical reliability of the nano capacitor can be enhanced, the plane areais not additionally occupied, and the size reduction of the nano capacitor is facilitated.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing, and in particular relates to a three-dimensional integrated structure of a high-storage-capacity nano-capacitor and a preparation method thereof. Background technique [0002] At present, for portable electronic devices, batteries are still the main energy supply components. Although battery technology continues to evolve, there is still a trade-off between battery capacity and volume and weight. Accordingly, some alternative power supply components with large capacity, light weight and small volume have been researched and developed, such as micro fuel cells, plastic solar cells and energy harvesting systems. In all the cases mentioned above, an energy buffer system is generally required to maintain a continuous and stable energy output. For example, fuel cell systems are generally considered to have slower start-up times and lower kinetic energy. Therefore, a hybrid system in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/08H01L21/822
CPCH01L27/0805H01L21/8221
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV