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Semiconductor element and manufacturing method thereof

A semiconductor and component technology, applied in the field of magnetoresistive random access memory and its fabrication, can solve the problems of insufficient sensitivity, expensive fabrication process, power consumption, etc.

Pending Publication Date: 2021-01-08
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of the above-mentioned prior art generally include: larger chip area, more expensive manufacturing process, more power consumption, insufficient sensitivity, and susceptibility to temperature changes, etc., and it is necessary to further improve

Method used

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  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

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Embodiment Construction

[0026] Please refer to Figure 1 to Figure 4 , Figure 1 to Figure 4 A schematic diagram of the manner in which a semiconductor device, or more specifically an MRAM cell, is fabricated for an embodiment of the present invention. like Figure 1 to Figure 4 As shown, first a substrate 12 is provided, such as a substrate 12 made of semiconductor material, wherein the semiconductor material can be selected from silicon, germanium, silicon germanium compound, silicon carbide (silicon carbide), gallium arsenide (gallium arsenide) etc., and a magnetic tunneling junction (magnetic tunneling junction, MTJ) region 14 and a logic region (not shown) are preferably defined on the substrate 12 .

[0027] The substrate 12 may include active (active) elements such as metal-oxide semiconductor (MOS) transistors, passive (passive) elements, conductive layers, and interlayer dielectric layers (interlayerdielectric, ILD) 16, etc. A dielectric layer covers it. More specifically, the substrate 12 ...

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Abstract

The invention discloses a semiconductor element and a manufacturing method thereof, and the method for manufacturing the semiconductor element comprises the steps: firstly forming a magnetic tunnelingjunction (MTJ) on a substrate and an upper electrode on the MTJ, then forming a first intermetallic dielectric layer surrounding the MTJ and the upper electrode, and forming a stop layer on the firstintermetallic dielectric layer, and forming a second intermetallic dielectric layer on the stop layer, performing a first etching process to remove the second intermetallic dielectric layer and the stop layer, performing a second etching process to remove a part of the upper electrode, and forming a metal interconnect connected to the upper electrode.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM) and a manufacturing method thereof. Background technique [0002] It is known that the magnetoresistance (MR) effect is the effect that the resistance of the material changes with the change of the applied magnetic field. The definition of its physical quantity is the resistance difference under the presence or absence of a magnetic field divided by the original resistance, which is used to represent the resistance change. Rate. At present, the magnetoresistance effect has been successfully used in the production of hard disks, and has important commercial application value. In addition, using the characteristics of giant magnetoresistance materials having different resistance values ​​in different magnetization states, it can also be made into magnetic random access...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12G11C11/16H10N50/10H10N50/01H10N50/80
CPCG11C11/16H10N50/10H10N50/01H10N50/80H10B61/22
Inventor 李珮瑈何坤展陈炫旭陈俊隆
Owner UNITED MICROELECTRONICS CORP
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