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Crucible assembly for single crystal furnace and single crystal furnace

A single crystal furnace and crucible technology, which is applied in the field of crystal processing equipment, can solve the problems affecting the quality of crystal ingots, the molten soup in the crystal growth area is not uniform enough, and impurity hits, etc., and achieves the effects of stable liquid level, stable growth and smooth flow

Pending Publication Date: 2021-01-12
XUZHOU XINJING SEMICON TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method still has the problem of insufficient uniformity of the melting soup in the crystal growth area of ​​the molten material area, and it is easy to cause impurity hits, which will affect the quality of the ingot

Method used

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  • Crucible assembly for single crystal furnace and single crystal furnace
  • Crucible assembly for single crystal furnace and single crystal furnace
  • Crucible assembly for single crystal furnace and single crystal furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0093] In this example, if figure 1 and figure 2 As shown, the crucible assembly 100 includes a first crucible 1 , a second crucible 2 , a third crucible 3 and a tray 8 .

[0094] The first crucible 1 includes a crucible bottom wall 12 and a crucible side wall 13, the crucible side wall 13 extends upwards from the edge of the crucible bottom wall 12, and the crucible side wall 13 and the crucible bottom wall 12 jointly define a holding space 100a, the holding space The top side of 100a is opened; the tray 8 is supported on the bottom wall of the crucible bottom wall 12, the second crucible 2 is formed into a cylindrical structure, the second crucible 2 is arranged in the storage space 100a, and the second crucible 2 passes through the first card The falcon structure 5 cooperates with the bottom wall 12 of the crucible so that the second crucible 2 and the first crucible 1 jointly define the first chamber R1; the third crucible 3 is formed into a cylindrical structure, and th...

Embodiment 2

[0099] Such as image 3 and Figure 4As shown, the structure of this embodiment is substantially the same as that of Embodiment 1, wherein the same components use the same reference numerals, the difference is that: the crucible assembly 100 also includes a fourth crucible 4, and the fourth crucible 4 is arranged in the first cavity chamber R1 to divide the first chamber R1 into a first subchamber R11 and a second subchamber R12, and a third communication hole 40 is formed on the fourth crucible 4 to communicate with the first subchamber R11 and the second subchamber R12. Chamber R12. Wherein, the first sub-chamber R11 is adapted to be configured as a raw material feeding area Ω11 , and the second sub-chamber R12 is adapted to be configured as a dopant feeding area Ω12 .

[0100] The first crucible 1 includes a first body 11, the second crucible 2 includes a second body 21, the third crucible 3 includes a third body 31, the fourth crucible 4 includes a fourth body 41, the fi...

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Abstract

The invention discloses a crucible assembly for a single crystal furnace and the single crystal furnace. The crucible assembly comprises a first crucible, a second crucible and a third crucible, a containing space is defined in the first crucible, the second crucible is arranged in the containing space, and a first cavity is jointly defined by the second crucible and the first crucible; the thirdcrucible is arranged in the second crucible, a second cavity is defined by the third crucible and the second crucible, and a third cavity is defined in the third crucible. A first communicating hole is formed in the second crucible to communicate the first cavity with the second cavity, a second communicating hole is formed in the third crucible to communicate the second cavity with the third cavity, the hole diameter of the first communicating hole is d1, the hole diameter of the second communicating hole is d2, d1 and d2 meet the condition that d1 is smaller than d2, the first cavity is suitable for forming a discharging area, and the third cavity is suitable for forming a crystal growth area. According to the crucible assembly for the single crystal furnace, the uniformity of molten liquid can be improved, impurities are prevented from hitting the crucible assembly, smooth flowing of the molten liquid is guaranteed, and stable production is achieved.

Description

technical field [0001] The invention relates to the technical field of crystal processing equipment, in particular to a crucible assembly for a single crystal furnace and a single crystal furnace. Background technique [0002] In the related art, a double-layer crucible or a quartz ring is usually used to separate the molten material area from the crystal growth area in the production of single crystal silicon by CCZ (continuous extraction method). However, this method still has the problem of insufficient uniformity of the molten soup in the crystal growth area in the molten material area, and it is easy to cause impurities to hit, which affects the quality of the ingot. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, the present invention proposes a crucible assembly for a single crystal furnace, the crucible assembly is conducive to improving the uniformity of the ...

Claims

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Application Information

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IPC IPC(8): C30B15/10
CPCC30B15/002C30B15/10
Inventor 黄末陈翼刘奇刘林艳高海棠
Owner XUZHOU XINJING SEMICON TECH CO LTD