Flexible resistive random access memory based on FeS2-ZrO2-rGo and preparation method of flexible resistive random access memory

A technology of fes2-zro2 and resistive variable memory, which is applied in the field of memory, can solve the problems that the resistance variable performance and bending ability of storage capacity need to be improved, and the flexible RRAM technology is immature, so as to improve the resistance change ability, stability, and The effect of storage capacity

Inactive Publication Date: 2021-01-22
郭希剑
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing flexible RRAM technology is still immature, especially in terms of storage capacity, resistive switching performance after multiple cycles, and bending capacity.

Method used

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  • Flexible resistive random access memory based on FeS2-ZrO2-rGo and preparation method of flexible resistive random access memory
  • Flexible resistive random access memory based on FeS2-ZrO2-rGo and preparation method of flexible resistive random access memory
  • Flexible resistive random access memory based on FeS2-ZrO2-rGo and preparation method of flexible resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031]Step 1: Dissolve 4.98g of terephthalic acid in 62.3ml of DMF, stir at room temperature for 10min, then add 3.24g of ferric chloride to the solution, ultrasonicate for 5min; then drop 31.2 ml of absolute ethanol, stirred for 20 min, transferred the mixed solution to a reaction kettle and kept it at 100°C for 20 h, cooled to room temperature, washed alternately with DMF and absolute ethanol for 5 times, and dried in a vacuum freeze-drying oven. After drying, put the material in a muffle furnace, first raise it to 320°C at a speed of 3°C / min and keep it for 3h, then rise to 550°C at a speed of 1°C / min and then calcinate for 1.5h; after cooling to room temperature, put The product is placed in a tube furnace and passed into H 2 S, heated to 450°C and held for 70min to obtain FeS 2 Material.

[0032] Step two: the ZrOCl of 3.7g 2 ·8H 2 O and 0.97g urea were added to 61.7ml deionized water, stirred at room temperature for 20min; then 2.4g of FeS was added 2 And sonicate f...

Embodiment 2

[0036] Step 1: Dissolve 5.98g of terephthalic acid in 74.8ml of DMF, stir at room temperature for 15min, then add 4.86g of ferric chloride to the solution, ultrasonicate for 6min; then drop 24.9 ml of absolute ethanol, stirred for 15 minutes, transferred the mixed solution to a reaction kettle and kept at 90°C for 24 hours, cooled to room temperature, washed alternately with DMF and absolute ethanol for 5 times, and dried in a vacuum freeze-drying oven. After drying, put the material in a muffle furnace, first raise it to 320°C at a speed of 3°C / min and keep it warm for 2h, then raise it to 550°C at a speed of 1°C / min and then calcinate for 1.5h; after cooling to room temperature, put The product is placed in a tube furnace and passed into H 2 S, heated to 450°C and held for 67min to obtain FeS 2 Material.

[0037] Step 2: the ZrOCl of 4.9g 2 ·8H 2 O and 1.1g urea were added to 81.7ml deionized water, stirred at room temperature for 25min; then 3.6g of FeS was added 2 And...

Embodiment 3

[0041] Step 1: Dissolve 4.78g of terephthalic acid in 59.8ml of DMF, stir at room temperature for 12min, then add 3.68g of ferric chloride to the solution, and ultrasonicate for 7min; then drop 23.9 ml of absolute ethanol, stirred for 16 minutes, transferred the mixed solution to a reaction kettle and kept at 96°C for 23 hours, cooled to room temperature, washed alternately with DMF and absolute ethanol for 5 times, and dried in a vacuum freeze-drying oven. After drying, put the material in a muffle furnace, first raise it to 320°C at a speed of 3°C / min and keep it warm for 2.5h, then raise it to 550°C at a speed of 1°C / min and then calcinate for 1h; after cooling to room temperature, put The product is placed in a tube furnace and passed into H 2 S, heated to 450°C and held for 63min to obtain FeS 2 Material.

[0042] Step two: the ZrOCl of 3.78g 2 ·8H 2 O and 0.86g urea were added to 63ml deionized water, stirred at room temperature for 29min; then 2.7g of FeS was added ...

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Abstract

The invention belongs to the technical field of memories, and particularly relates to a flexible resistive random access memory based on FeS2-ZrO2-rGo and a preparation method of the flexible resistive random access memory. The preparation method comprises the steps of preparing Fe-MOF from terephthalic acid and ferric chloride, then calcining the MOF in a muffle furnace, transferring into a tubular furnace into which H2S is introduced to be calcined to obtain FeS2, and preparing ZrO2 on the surface of FeS2 with ZrOCl2.8H2O and urea; mixing FeS2-ZrO2 and graphene oxide, placing the mixture inthe reaction kettle, reducing in the reaction kettle to obtain FeS2-ZrO2-rGO, finally preparing a FeS2-ZrO2-rGO film on the ITO PET substrate, and preparing an Ag top electrode on the film to obtain the Ag / FeS2-ZrO2-rGO / ITO flexible resistive random access memory. The minimum bending radius of the flexible resistive random access memory is small, and the flexible resistive random access memory isgood in resistance change performance after circulation.

Description

technical field [0001] The invention belongs to the field of memory technology, in particular to a FeS-based 2 -ZrO 2 -rGO flexible resistive memory and its preparation method. Background technique [0002] Semiconductor memory is the memory unit of electronic equipment, which is used to store various types of information and is an indispensable part of contemporary information technology; it is a semiconductor device that can store binary data. The so-called semiconductor device is a semiconductor medium device as a carrier. Memory can be divided into different types of memory according to different classification situations. Classification can be based on media, storage methods, read and write functions, information storability and usage; semiconductor memory is divided into volatile memory according to the length of time data is retained in the memory and non-volatile memory. Among them, the data stored in the volatile memory needs to be maintained by the power supply...

Claims

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Application Information

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IPC IPC(8): C03C17/42C03C17/38G11C13/00
CPCC03C17/3644C03C17/3671C03C17/38C03C17/42C03C2217/29C03C2218/116C03C2218/151G11C13/0002
Inventor 郭希剑程亮
Owner 郭希剑
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