Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Compound semiconductor wafer scribing machine

A semiconductor and compound technology, applied in the field of compound semiconductor wafer dicing machine, can solve the problems of low cutting precision and high defect rate, and achieve the effect of convenient operation, small damage and accurate alignment

Inactive Publication Date: 2021-01-22
HEBEI KTHAHCO TECH CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the advanced production technology of gallium arsenide materials is mainly in the hands of developed economies such as Japan, Germany and the United States. The market is full of compound semiconductor dicing machines produced by the United States, Japan and Germany, but the existing semiconductor dicing machines on the market have The shortcomings of low scribing precision and high defect rate have brought certain adverse effects on people's use process. Therefore, we propose a compound semiconductor wafer dicing machine

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compound semiconductor wafer scribing machine
  • Compound semiconductor wafer scribing machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0023] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "another end" The orientation or positional relationship indicated by etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific Azimuth configuration and operation, therefore, should not be construed as limiting the invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and should not be understood ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a compound semiconductor wafer scribing machine, and the wafer scribing machine comprises an equipment shell; a display screen is arranged at the front end of the equipment shell, an operation screen is arranged on one side of the display screen, an adjusting opening is formed in the lower end of the display screen, an observation window is formed in the lower end of the adjusting opening, and a console is arranged on one side of the observation window; the electrical control device comprises a quartz workbench, a first motion control device, a tool bit device, a visualpositioning device, a second motion control device and a gram weight feedback device. According to the compound semiconductor wafer scribing machine, the blank in the aspect of domestic compound semiconductor material scribing is filled up, wafer scribing is conducted on compound semiconductor materials such as gallium arsenide through the diamond scribing tool, accurate alignment can be achievedthrough manual or automatic control, load scribing is set, the damage to compound semiconductor materials is small, and the physical or photoelectric characteristics of the chip are prevented from being damaged.

Description

technical field [0001] The invention relates to the field of chip processing equipment, in particular to a compound semiconductor wafer dicing machine. Background technique [0002] At present, gallium arsenide (GaAs) material is the most produced and widely used compound semiconductor material. Due to its excellent performance and energy band structure, gallium arsenide optoelectronic chips are the main components in the fields of data communication and laser. Compared with traditional silicon semiconductor materials, it mainly has the following characteristics: it can process photoelectric data on one chip at the same time, it has the characteristics of high electron mobility, large band gap, direct band gap, and low power consumption. At present, the advanced production technology of gallium arsenide materials is mainly in the hands of developed economies such as Japan, Germany and the United States. The market is full of compound semiconductor dicing machines produced b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/78
CPCH01L21/67011H01L21/67086H01L21/67242H01L21/67253H01L21/78
Inventor 温子勋张文杰张一暾
Owner HEBEI KTHAHCO TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products