Electro-optical modulator based on stress silicon and preparation method thereof

Abstract

The invention provides an electro-optical modulator based on stress silicon and a preparation method thereof, and the method comprises the steps: providing a substrate SOI; etching a ridge-type silicon waveguide layer and slab layers located on the two sides of the ridge-type silicon waveguide layer on the SOI silicon layer through photoetching, and performing doping; wherein the ridge-type silicon waveguide layer comprises a first monocrystalline silicon layer and a second monocrystalline silicon layer, and a channel is formed between the first monocrystalline silicon layer and the second monocrystalline silicon layer; depositing amorphous silicon in the channel; depositing a layer of silicon dioxide on the amorphous silicon and ridge-shaped silicon waveguide layer; radiating the surfaceof the silicon dioxide through a high-power laser. Laser radiated by the high-power laser device penetrates through the surface of the silicon dioxide to irradiate the amorphous silicon, so that the amorphous silicon is annealed to generate a third monocrystalline silicon layer, and the ridge-shaped silicon waveguide layer generates tensile stress on the transverse axis, thereby breaking through the central inversion symmetrical structure of the monocrystalline silicon. And therefore, a first-order electro-optical effect can be realized, and the modulation efficiency of the silicon-based electro-optical modulator can be improved.

Description

technical field [0001] The invention relates to the field of modulators, in particular to an electro-optic modulator based on stress silicon and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support of the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been an upsurge in the construction of backbone transmission networks worldwide, and the transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also facing opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silicon-based optoelectronic d...

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Problems solved by technology

However, the plasmonic dispersion effect is still very weak, resulting in low modulation efficiency and large device size of the currently used silicon-based electro-optic modulators

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