Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and forming method thereof

A technology of semiconductor and conductive structure, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem that the performance of semiconductor devices needs to be improved

Pending Publication Date: 2021-02-02
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices formed by existing technologies needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] As mentioned in the background, existing semiconductor structures perform poorly.

[0032] The reasons for the poor performance of the semiconductor structure will be described in detail below in conjunction with the accompanying drawings. Figure 1 to Figure 6 It is a schematic cross-sectional view of each step of a method for forming a semiconductor structure.

[0033] Please refer to figure 1 A substrate 100 is provided, the surface of the substrate 100 has a first dielectric layer 110 and a first opening 120 inside the first dielectric layer 110 , and a part of the surface of the substrate 100 is exposed at the bottom of the first opening 120 .

[0034] Please refer to figure 2 , forming a material film 121 and an adhesive layer 122 on the surface of the material film on the sidewall and bottom surface of the first opening 120 and on the surface of the first dielectric layer 110 .

[0035] Please refer to image 3 , using an annealing process to make the materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a substrate, wherein the surface of the substrate is provided with afirst dielectric layer; forming a first opening in the first dielectric layer, wherein part of the surface of the substrate is exposed from the bottom of the first opening; forming a metal silicide layer on the surface of the substrate at the bottom of the first opening; forming a sacrificial layer located on the surface of the metal silicide layer in the first opening; forming a second dielectric layer on the surface of the first dielectric layer and the surface of the metal silicide layer; etching part of the second dielectric layer, forming a second opening in the second dielectric layer,and exposing the top surface of the sacrificial layer at the bottom of the second opening; after the second opening is formed, removing the sacrificial layer; and after the sacrificial layer is removed, forming conductive structures in the first opening and the second opening. The semiconductor structure formed by the method is good in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in the integrated circuit is continuously reduced, so that the operation speed of the entire integrated circuit will be effectively improved. As the size of components is required to be smaller and smaller, the size of the corresponding conductive structure is smaller and smaller. [0003] The method for forming the conductive structure includes: providing a semiconductor substrate; forming a first dielectric layer on the semiconductor substrate, the first dielectric layer having a first opening; forming a first plug in the first opening; After forming the first plug, forming a second dielectric layer on the surface of the first plug and the surface of the first dielectric layer; ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/48H01L23/485H01L23/535
CPCH01L21/76813H01L21/76831H01L23/481H01L23/4855H01L23/535
Inventor 张浩郭雯童哲源于海龙雒建明
Owner SEMICON MFG INT (SHANGHAI) CORP