A GaN-based radio frequency transceiver front-end structure

Abstract

The invention discloses a gallium nitride-based radio frequency transceiver front-end structure, which relates to the field of 5G integrated circuits. This solution is proposed to solve the problem that the amplifier cannot be biased on both sides due to the failure of bonding wires in the center of the chip. The substrate is provided with a number of ground via holes in the gap, and the ground via holes are distributed along the extending direction of the gap; a first power bus extending in the same direction is provided between the ground via holes and the first amplifier in the gap, and between the ground via holes and the second amplifier A second power bus extending in the same direction is provided; the DC bias end of the first amplifier close to the gap is connected to the first power bus, and the DC bias end of the second amplifier close to the gap is connected to the second power bus; the first power bus and One end of the second power bus extends to the outer pads of the chip respectively. The advantage is that it solves the problem that the bonding wire cannot be connected in the center of the chip, realizes that the on-chip parallel amplifiers can achieve double-sided DC bias, and effectively improves the performance and stability of the chip.

Description

Technical field[0001]The present invention relates to a 5G integrated circuit structure, and more particularly to a front end structure of a gallium nitride base infusion.Background technique[0002]The millimeter wave RF front end based on the gallium nitride process is one of the most important modules in the 5G communication chip, and is widely used in automotive radar, aircraft radar, precise guidance and star-load communication. At present, the millimeter wave RF front-end chip based on the gallium nitride process has become a key research content of high-tech industries in all countries, in which power amplifier PA often uses a power division structure to achieve higher output power, while low noise amplifier LNA usually uses a single End, balanced or differential structure. The frequency range of millimeter waves is 26.5 ~ 300GHz, and the radio frequency receiving front end chip design designed in this band is highly frequent, and the electromagnetic coupling is often facing th...

AI Technical Summary

Problems solved by technology

Since the center of the chip cannot be marked with a DC bias bonding wire, the adjacent pads of the PA and LNA are suspended

PA and LNA can only use unilateral DC bias, resulting in performance degradation, poor stability and other issues

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