Device and method for adjusting wafer surface shape and thickness difference

Abstract

The invention discloses a device and method for adjusting wafer surface shape and thickness difference. The device comprises a bed, a rough grinding shaft, a fine grinding shaft, a polishing shaft, a turntable, four workbenches, a memory and a controller. The device of the present invention adopts the layout of three spindles and four stations, which greatly improves the integration of wafer processing equipment; the adjustment sequence of the method of the present invention is rough grinding shaft wafer thickness compensation, fine grinding shaft surface shape adjustment, rough grinding shaft surface Type adjustment, fine grinding axis wafer thickness compensation, the memory stores the difference between the thickness of the wafer processed by the rough grinding axis and the fine grinding axis on each workbench and the ideal thickness, and the controller according to the spindle and workbench used for grinding , read the corresponding thickness difference from the memory, add the read thickness difference to the vertical feed input by the spindle used, and use the added feed as the actual feed of the spindle used quantity. The invention not only reduces the number of support points, but also ensures the rigidity of the fine grinding wheel, and greatly improves the surface shape accuracy of wafer processing.

Description

Technical field [0001] The present invention relates to the field of wafer ultra-precision processing, and more particularly to a wafer surface and a thickness difference adjusting device and method. Background technique [0002] like figure 1 As shown, the evaluation index of the wafer surface has two, respectively, is a concave region δ, respectively. 1 And fullness δ 2 The surface adjustment method is mainly to change the angle of the grinding wheel 1 and the wafer 2 to adjust. The existing wafer surface adjustment method is mainly the following three types: [0003] The first kind, such as figure 2 As shown, the grinding wheel 1 or the wafer 2 can be sequentially adjusted with each other X, Y-axis angle of the grinding wheel 1 and the wafer 2, wherein the X-axis is connected to the center of the grinding wheel and the wafer center. Inside the wafer; [0004] Second, such as image 3 As shown, the grinding wheel 1 or the wafer 2 is adjusted about the grinding wheel 1 and the an...

AI Technical Summary

Problems solved by technology

[0007] However, the above-mentioned wafer surface shape adjustment method and the thickness difference control device still have certain defects in the actual use process, such as the first and second adjustment methods in the existing surface shape adjustment method, when adjusting around any axis, all changes will be made at the same time. Surface shape evaluation index δ 1 and δ 2 , resulting in difficult adjustment; the third adjustment method among the existing surface shape adjustment methods has many adjustment mechanisms, resulting in poor overall rigidity of the process system; strict thickness difference requirements will lead to a substantial increase in the processing cost of processing device parts

Images