Preparation method of Pd/Ti double-layer getter film and Pd/Ti double-layer getter film

A getter film and film technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of affecting the pumping speed, poor preparation effect, destroying ultra-high vacuum, etc. The effect of post-maintenance cost, lower activation temperature, and higher pumping speed

Active Publication Date: 2021-02-09
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The inventors found that in the related art, when preparing the Pd/Ti double-layer getter film, the ...

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  • Preparation method of Pd/Ti double-layer getter film and Pd/Ti double-layer getter film

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[0023] Embodiments of the present application are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary, and are only for explaining the present application, and should not be construed as limiting the present application. On the contrary, the embodiments of the present application include all changes, modifications and equivalents falling within the spirit and scope of the appended claims.

[0024] figure 1 It is a schematic flow chart of a method for preparing a Pd / Ti double-layer getter film proposed in an embodiment of the present application.

[0025] The preparation method of the Pd / Ti double-layer getter thin film in the embodiment of the present application is applied in the preparation equipment, see figure 2 , figure 2 It is a sch...

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Abstract

The invention provides a preparation method of a Pd/Ti double-layer getter film and the Pd/Ti double-layer getter film. The method comprises the steps that evaporation coating is conducted when the lowest background pressure intensity is obtained, a Ti metal wire is sublimated at a first deposition temperature ranging from 200 DEG C to 300 DEG C for a first deposition time ranging from 60 min to 90 min by adopting a first deposition current of 45 A, thereby depositing a Ti element on the plated surface to form a bottom layer film; and a Pd metal wire is sublimated at a second deposition temperature ranging from 100 DEG C to 180 DEG C for a second deposition time of 20 minutes by adopting a second deposition current of 45A while the Ti element is deposited on the plated surface, thereby depositing the Pd element on the bottom layer film and forming a surface layer film on the surface of the bottom layer film. According to the preparation method of the Pd/Ti double-layer getter film andthe Pd/Ti double-layer getter film, ultrahigh vacuum can be prevented from being damaged when the Pd/Ti double-layer getter film is prepared, so that the maintenance of the ultrahigh vacuum and the low activation temperature of the Pd/Ti double-layer getter film are both considered, the pumping speed of preparation equipment is increased in an auxiliary manner, and the preparation effect of the Pd/Ti double-layer getter film is improved.

Description

technical field [0001] The present application relates to the technical field of vacuum packaging, in particular to the technical field of vacuum packaging of ultra-high vacuum, particle accelerators, and MEMS (Micro-Electro-Mechanical System, micro-electro-mechanical systems) electronic devices, and in particular to a Pd / Ti double-layer getter Film preparation method and Pd / Ti bilayer getter film. Background technique [0002] Non-evaporable getter (NEG)) thin films are widely used in many accelerators and light source devices around the world due to their unique advantages such as small size, easy preparation, oil-free, non-magnetic, and vibration-free. [0003] The inventors have found that in the related art, the ultra-high vacuum will be destroyed when preparing the Pd / Ti double-layer getter film, which will affect the pumping speed and the preparation effect is not good. Contents of the invention [0004] This application aims to solve one of the technical problems ...

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Application Information

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IPC IPC(8): C23C14/24C23C14/16C23C14/56
CPCC23C14/24C23C14/16C23C14/564
Inventor 张志伟何平马永胜
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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