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A method for optimizing the carrier concentration of thermoelectric materials

A technology of carrier concentration and thermoelectric materials, applied in chemical instruments and methods, manufacturing/processing of thermoelectric devices, polycrystalline material growth, etc., can solve problems such as low efficiency, limited optimization process, slow material development process, etc., to achieve The effect of shortening the development cycle and reducing the development cost

Active Publication Date: 2022-03-22
浙江先导热电科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem that the optimization process of the thermoelectric material carrier concentration n is very limited, resulting in a very slow material development process and low efficiency, the present invention proposes a method for optimizing the carrier concentration of thermoelectric materials, which is simple and efficient, and saves material development links A large amount of manpower and material resources reduce development costs and accelerate the engineering application of material research

Method used

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  • A method for optimizing the carrier concentration of thermoelectric materials
  • A method for optimizing the carrier concentration of thermoelectric materials
  • A method for optimizing the carrier concentration of thermoelectric materials

Examples

Experimental program
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Effect test

Embodiment 1

[0045] (1) N-type bismuth telluride base melting ingot prepared by single melting zone and single zone melting;

[0046] (1.1) Pulverize the raw materials Bi, Te, Se and I;

[0047] (1.2) One end of a quartz tube with an inner diameter of 28mm and a length of about 900mm is sealed with a hydrogen-oxygen flame, and it is flat-bottomed. Wash once with ethanol, then put the quartz tube into an oven and dry at 120°C for 12 hours for later use;

[0048] According to the chemical formula of N-type conventional column Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of each element in the method weighs 1000g of raw materials in step (1), puts them into a dried quartz tube, and mixes 10g of I element.

[0049] (1.3) the vacuum degree of quartz tube in step (2) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame to form a flat bottom;

[0050] (1.4) Place the quartz tube in step (3) in a rotary smelting furnace at 800°C for 10 hours, and keep sha...

Embodiment 2

[0056] (1) P-type bismuth telluride base melting ingot prepared by single melting zone and single zone melting;

[0057] (1.1) Pulverize raw materials Bi, Sb, Te and Fe particles;

[0058] (1.2) One end of a quartz tube with an inner diameter of 28mm and a length of about 900mm is sealed with a hydrogen-oxygen flame, and it is flat-bottomed. Wash once with ethanol, then put the quartz tube into an oven and dry at 120°C for 12 hours for later use;

[0059] According to the P-type chemical formula Bi 1.3 Sb 0.7 Te 3 The stoichiometric ratio of each element in the step (1) takes a total of 1000g of raw materials, puts them into a dried quartz tube, and mixes 10g of Fe element.

[0060] (1.3) the vacuum degree of quartz tube in step (2) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame to form a flat bottom;

[0061] (1.4) Place the quartz tube in step (3) in a rotary smelting furnace at 800°C for 10 hours, and keep shaking during the...

Embodiment 3

[0067] (1) N-type bismuth telluride-based ingots prepared by single melting zone and secondary zone melting;

[0068] (1.1) Pulverize the raw materials Bi, Te, Se and Cu;

[0069] (1.2) One end of a quartz tube with an inner diameter of 28mm and a length of about 900mm is sealed with a hydrogen-oxygen flame, and it is flat-bottomed. Wash once with ethanol, then put the quartz tube into an oven and dry at 120°C for 12 hours for later use;

[0070] According to the chemical formula of N-type conventional column Bi 2 Te 2.3 Se 0.7 The stoichiometric ratio of each element in the step (1) was weighed to take a total of 1000g of raw materials, put it into a dried quartz tube, and add 10g of Cu element.

[0071] (1.3) the vacuum degree of quartz tube in step (2) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame to form a flat bottom;

[0072] (1.4) Place the quartz tube in step (3) in a rotary smelting furnace at 800°C for 10 hours, and ...

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Abstract

The invention belongs to the field of thermoelectric materials. In order to solve the problem that the optimization process of the thermoelectric material carrier concentration n is very limited, resulting in a very slow material development process and low efficiency, the invention proposes a method for optimizing the carrier concentration of thermoelectric materials. One or more regional smelting in a single melting zone, or one regional smelting in multiple melting zones, to prepare the composition gradient ingot for the thermoelectric material matrix to be studied. Simple and efficient, it saves a lot of manpower and material resources in the material development process, reduces development costs, and accelerates the engineering application of material research.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and in particular relates to a method for optimizing carrier concentration of thermoelectric materials. Background technique [0002] At present, a large amount of low-grade heat energy is directly discharged as waste heat, resulting in a low energy utilization rate in human society. Thermoelectric devices can directly realize the conversion of heat energy and electric energy. Due to their small size, no noise, and no moving parts, they have unique application advantages. The cooling efficiency of thermoelectric devices mainly depends on the material's dimensionless thermoelectric figure of merit zT = α 2 σT / κ, where α is the Seebeck coefficient of the material, σ is the electrical conductivity, and κ is the thermal conductivity. alpha 2 σ is called the power factor (PF) and is a measure of the electrical properties of the material. It should be pointed out that α, σ, and κ are all clo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/08C30B29/46H01L35/34H10N10/01
CPCC30B28/08C30B29/46H10N10/01
Inventor 翟仁爽刘凌波吴永庆阮炜
Owner 浙江先导热电科技股份有限公司
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