Semiconductor device and preparation method thereof

Abstract

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate, a multi-layer semiconductor layer, a dielectric layer, a source electrode and a drain electrode; a gate trench is formed in the multi-layer semiconductor layer and the dielectric layer; and a gate is formed in the gate trench. The gate trench comprises a gate trench first part formed in the multi-layer semiconductor layer and a gate trench second part penetrating through the dielectric layer, and the gate trench second part comprises a second opening located in the surface of the side, close to the substrate, of the dielectric layer and a third opening located in the surface of the side, away from the substrate, of the dielectric layer; and the vertical projection of the third opening on the substrate covers the vertical projection of the second opening on the substrate, and the opening area of the third opening is larger than that of the second opening. According to the design, the side, close to the substrate, of the gate is small in size, and high-frequency characteristics can be achieved easily; and the side, away from the substrate, of the gate is large in size, so that gate electrode resistance can be reduced, the short-channel effect of the semiconductor device is restrained, and the reliability of the semiconductor device is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] GaN semiconductor devices have the advantages of high output power and high operating frequency, and are very suitable for high-frequency and high-power application scenarios. Therefore, the research on GaN high-frequency devices has become more and more recognized by the industry, and has gradually become one of the hot spots in the research of semiconductor high-frequency devices. one. [0003] In recent years, the application of GaN microwave devices, especially the rapid development of 5G technology, urgently needs to strengthen the research of high-frequency and high-power devices. Therefore, the realization of GaN high-frequency device technology is of great significance. [0004] The gate length process window design is closely related to the frequency...

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Problems solved by technology

[0006] In view of this, an embodiment of the present invention provides a semiconductor device and a manufacturing method thereof, which solves the technical problem that the fine gate technology in the existing semiconductor device cannot take into account small parasitic resistance, low parasitic capacitance and reliable quality, and is conducive to improving the radio frequency microwave field. Application of High Frequency Characteristics of Semiconductor Devices

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