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3D stacked spatial power synthesis amplifier

An amplifier and stacking technology, applied in the field of high-density array power synthesis amplifiers, can solve the problem of low space utilization of space power synthesis technology, and achieve the effects of reduced size and weight, high density and short connection distance

Active Publication Date: 2021-02-09
10TH RES INST OF CETC
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AI Technical Summary

Problems solved by technology

[0005] In order to achieve the purpose of improving the miniaturization and high power of the microwave / millimeter wave power synthesis amplifier, the present invention aims at the problem that the space utilization rate of the current space power synthesis technology is not high, and provides A spatial power combining amplifier in the form of 3D stacking with shorter connection distance and higher integration

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Embodiment Construction

[0015] refer to figure 1 . In the embodiment described below, a 3D stacked spatial power combining amplifier includes: a first synthesizing system formed by stacking an amplifier array 1 of a wire-bonded chip and a network array 1 of a stacked power distribution / combiner. Front 1, the amplifier front 2 of the wire-bonded chip and the network front 2 of the laminated power distribution / combiner are stacked together to form the second composite front 2; similarly, the amplifier front N of the wire-bonded chip On the top, the network front N of the stacked power distribution / synthesizer is on the bottom, and the interconnected synthesis front N is formed based on 3D micro-mechanical technology; the stacked power distribution / synthesis network front N-1 and the amplifier front N-1 The synthetic front N-1 formed by vertical interconnection, wherein: the first synthetic front 1 and the second synthetic front 2 are stacked, and the synthetic front N and the synthetic front N-1 are s...

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Abstract

The invention discloses a 3D stacked spatial power synthesis amplifier, and aims to provide a 3D power synthesis amplifier which is shorter in connection distance and higher in integration degree. According to the technical scheme, a first composite array plane 1 and a second composite array plane 2 are stacked, a composite array plane N and a composite array plane N1 are stacked, and input / outputnodes of the composite array planes 1-N are vertically interconnected from bottom to top and overlapped together in the Z direction to form an N array; an input radio frequency channel and an outputradio frequency channel which penetrate through the layers in the X direction are formed in layer stacks of the synthetic array planes 1-N based on the 3D micromechanical technology, and three-dimensional packaging of three-dimensional integration and signal communication is formed in the Z-axis direction; therefore, a hybrid 3D array in which a plurality of amplifier array planes and power distribution / synthesis network array planes are alternately stacked and vertically interconnected is formed. According to the invention, more amplifiers can be combined in the same volume. And the small-sized and high-power use is met.

Description

technical field [0001] The invention relates to the technical field of microwave / millimeter wave power amplification, in particular to a method including a power amplifier array and a power combining network layout, which is mainly applied to high-density array power combining amplifiers. Background technique [0002] In modern microwave / millimeter wave systems, the output power requirements of solid-state circuits are getting higher and higher. However, due to the low output power of solid-state power amplifiers, the basic technology to increase output power is power synthesis, which is a combination of multiple amplifiers. The technology that the output signal is superimposed and strengthened according to a certain amplitude / phase relationship. To achieve power combination in microwave circuits, the basic combination units are two-way Wilkinson bridge, Lange bridge and branch line coupler, etc., which are rarely used in millimeter-wave power combination amplifiers due to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/42
CPCH03F3/42
Inventor 党章朱海帆黄建刘祚麟
Owner 10TH RES INST OF CETC
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