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Semiconductor device

A semiconductor and conductive pattern technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of cracking of insulating plates, decreased reliability of semiconductor devices, poor thermal expansion coefficient of insulating plates, etc., to improve reliability. sexual effect

Pending Publication Date: 2021-02-09
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the ceramic circuit board is thermally stressed due to the difference in thermal expansion coefficient of the insulating board with respect to the conductive pattern and the metal board.
If the ceramic circuit board is subjected to thermal stress, the insulating plate will crack and the reliability of the semiconductor device will decrease

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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no. 1 approach

[0041] use figure 1 and figure 2 The semiconductor device of the first embodiment will be described. figure 1 is a cross-sectional view of the semiconductor device of the first embodiment, figure 2 It is a plan view of the ceramic circuit board included in the semiconductor device of the first embodiment. should be explained, figure 2 express figure 1 A cross-sectional view of the semiconductor device 1 (a bottom view of the ceramic circuit substrate 3 ) at the dashed-dotted line Y-Y. Therefore, the arrangement position of the conductive pattern 3b is indicated by a dotted line. In addition, in the first embodiment, the front side is figure 1 The surface of the semiconductor device 1 facing upward, for example, in the ceramic circuit board 3 , the surface on which the semiconductor element 2 is mounted is the front surface. reversed in figure 1 The surface facing the lower side in the semiconductor device 1 . For example, in the ceramic circuit board 3 , the surfac...

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Abstract

The present invention can moderate stress generated in the substrate while maintaining the layout area of a semiconductor element.In a side view of a semiconductor device (1), a first end surface (3b1) of a conductive pattern (3b) is formed to be displaced inward a ceramic circuit board (3) by a first distance (d1) in the horizontal direction of a main surface of the ceramic circuit board (3) withrespect to a second end surface (3c1) of a metal plate (3c). Further, a third end surface (2a1) of a semiconductor element (2) is formed to be displaced inward the ceramic circuit board (3) by a second distance (d2) in the horizontal direction of the main surface of the ceramic circuit board (3) with respect to the second end surface (3c1). Furthermore, a dimple (3c2) is formed in a predeterminedrange which is set apart inward the ceramic circuit board (3) from the first end surface (3b1) in the horizontal direction of the main surface of the ceramic circuit board (3).

Description

technical field [0001] The present invention relates to a semiconductor device. Background technique [0002] The semiconductor device includes, for example, semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor) and power MOSFET (Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor Field Effect Transistor). Such a semiconductor device is used, for example, as a power conversion device. A semiconductor device includes the semiconductor element and a ceramic circuit substrate. The ceramic circuit board has an insulating plate, a plurality of conductive patterns on which semiconductor elements are arranged on the front surface of the insulating plate, and a metal plate formed on the back surface of the insulating plate. Furthermore, a heat dissipation portion such as a heat sink is provided on the back surface of the ceramic circuit board. [0003] In addition, in recent years, ceramic circuit board...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/36H01L25/07H01L25/18H05K1/02
CPCH01L25/18H01L23/3735H05K1/053H05K1/0306H05K3/0058H05K1/0271H05K2201/066H05K2201/0305H05K2201/09745H01L2224/32225H01L23/13H01L23/15H01L23/585H01L25/07H05K2201/09145
Inventor 小田佳典上里良宪
Owner FUJI ELECTRIC CO LTD
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