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Method and apparatus for producing silicon carbide by chemical vapour-deposition

A silicon carbide, growth process technology, applied in chemical instruments and methods, gaseous chemical plating, from chemically reactive gases, etc., to achieve the effects of improving utilization, reducing divergence, and increasing growth rate

Inactive Publication Date: 2003-10-08
SIEMENS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Of course, with this known method only crystals up to 2 mm long can be grown

Method used

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  • Method and apparatus for producing silicon carbide by chemical vapour-deposition
  • Method and apparatus for producing silicon carbide by chemical vapour-deposition
  • Method and apparatus for producing silicon carbide by chemical vapour-deposition

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Embodiment Construction

[0018] according to figure 1 The apparatus comprises a reactor 10 with an outer wall 11 which can be designed in particular as a hollow cylinder (tubular) and which is preferably cooled, for example water-cooled. The outer wall 11 of the reactor 10 can especially be made of quartz glass. On one end face of the outer wall 11, a cover 12 is mounted, for example flanged. In the interior 33 of the reactor 10 surrounded by the outer wall 11 there is a substrate 6 which can in particular be designed as a hollow cylinder and which is heated (inductively) by the high-frequency magnetic field generated by the high-frequency diagram 7 . A preferred material for the base 6 is graphite. The base 6 is preferably thermally insulated from the outer wall 11 by means of thermal insulation 8, which may be made, for example, of foamed graphite. Inside the base 6 there is a base frame 5 supporting the base 4 . The substrate holder 5 is made of graphite, for example. A substrate suitable for ...

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PUM

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Abstract

Process for producing silicon carbide, comprises depositing silicon carbide from the gas phase by CVD on a substrate (4) from a first gas stream (2) containing a process gas for supplying silicon Si and carbon C and at least one carrier gas, and where the first gas stream (2) is practically completely surrounded by a parallel second gas stream (3). Also claimed is a process equipment.

Description

technical field [0001] The present invention relates to a method for producing silicon carbide by chemical vapor deposition (CVD for short) in the gas phase. Background technique [0002] In the CVD method for the production of silicon carbide (SiC), a gas flow consisting of a working gas for feeding silicon and carbon and a gas carrier (usually hydrogen) is directed to the substrate, whereby the gas mixture is separated on the substrate by a chemical reaction. Precipitation of SiC. From "Technial Digest of International Conference on SiC and Related Materuials", as Kyoto, Japan, 1995, p. 609" a CVD method for producing single crystal SiC is known, Wherein, the substrate temperature is adjusted between 1800°C and 2300°C. Thus, one obtains a high growth rate without at the same time adversely affecting the crystal quality. Growth rates in this known method amount to 0.5 mm / hour. Of course, with this known method only crystals up to 2 mm long can be grown. Contents of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C01B31/36C23C16/32C23C16/42C23C16/44C23C16/455H01L21/205
CPCC23C16/325C23C16/455C23C16/45519
Inventor 罗兰·鲁普约翰尼斯·韦尔克
Owner SIEMENS AG