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A gan HEMT device with high breakdown voltage

A technology with high breakdown voltage and high resistance, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of low breakdown voltage, achieve high breakdown voltage, increase threshold voltage, and improve breakdown voltage Effect

Active Publication Date: 2021-09-07
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned problems existing in the prior art, the object of the present invention is to provide a GaN HEMT device with high breakdown voltage resistance, which can effectively solve the problem of low breakdown voltage resistance of GaN HEMT devices using traditional gate field plate technology

Method used

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  • A gan HEMT device with high breakdown voltage
  • A gan HEMT device with high breakdown voltage
  • A gan HEMT device with high breakdown voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment 1 provides a GaN HEMT device with a gate segmented field plate and a polarization layer under the gate, and its structural diagram is as follows image 3 As shown, including a second substrate 201, a second GaN buffer layer 202, a second GaN channel layer 203, a second AlGaN barrier layer 204, a second gate dielectric layer 205 and SiO 2 The second passivation layer 209 is provided with a source electrode 207 and a drain electrode 206 at both ends above the GaN buffer layer 202, and a gate electrode 208 is arranged on the gate dielectric layer 205 close to the source electrode 207. The dielectric layer 205 is provided with a lower gate polarization layer 212, which is directly in contact with the lower AlGaN barrier layer 204. The starting point of one side of the gate lower polarization layer 212 is located at the side of the gate electrode 208, and the other side is terminated. The end point is located on the other side of the gate electrode 208; the s...

Embodiment 2

[0039] Embodiment 2 provides a GaN HEMT device with a gate segmented field plate and a polarized layer under the gate. The difference between Embodiment 2 and Embodiment 1 is that the left end of the polarized layer 212 under the gate starts At 0 μm on the right side of the electrode 208, other parameters are the same as those in Embodiment 1.

experiment example 1

[0053] Through simulation, the distribution comparison diagram of the channel electric field along the horizontal direction when the GaN HEMT device breaks down in Example 1 and Comparative Example 1, Comparative Examples 1 and 2, and the channel electric field along the horizontal direction when the GaN HEMT device breaks down in Comparative Example 1 The distribution diagram, the experimental results are as follows Figure 7 , Figure 6 as well as Figure 5 shown.

[0054] Depend on Figure 5 The distribution diagram of the channel electric field along the horizontal direction when the traditional device using gate field plate technology breaks down shows that after using the gate field plate, the peak value of the channel electric field is 2.1MV / cm at the right edge of the gate electrode with X=5μm , lower than the critical breakdown electric field of GaN material, the electric field distribution of the channel is relatively uniform, and the withstand voltage value of th...

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Abstract

The invention discloses a GaN HEMT device with high breakdown voltage resistance, belonging to the technical field of GaN HEMT devices, including a substrate 2, a GaN buffer layer 2, a GaN channel layer 2, and an AlGaN barrier layer 2 arranged in sequence from bottom to top , gate dielectric layer 2 and SiO 2 Passivation layer 2, a source electrode 2 and a drain electrode 2 are respectively arranged at both ends above the GaN buffer layer 2, a gate electrode 2 is arranged on the gate dielectric layer 2 close to the source electrode 2, and a gate electrode 2 is arranged in the gate dielectric layer 2. The lower polarization layer, and the lower polarization layer of the gate is directly in contact with the second AlGaN barrier layer below, SiO 2 The first gate segmented field plate and the second gate segmented field plate are arranged in the second passivation layer, which can effectively solve the problem of low breakdown voltage of GaN HEMT devices using traditional gate field plate technology.

Description

technical field [0001] The invention relates to the technical field of GaN HEMT devices, in particular to a GaN HEMT device with high breakdown voltage resistance. Background technique [0002] As a third-generation semiconductor material, GaN (gallium nitride) has a very high critical breakdown electric field (about 3.3MV / cm). In theory, GaN-based devices have a high breakdown voltage, but GaN actually made of GaN materials The breakdown voltage of HEMT (High Electron Mobility Transistor) devices is much lower than its theoretical value. The main reasons for the premature breakdown of GaN HEMT devices are as follows: 1) The electric field concentration effect of the gate electrode. When the GaN HEMT device is off, the channel depletion region will expand to the drain electrode, and the electric force lines emitted from the positive charges in the depletion region will concentrate on the edge of the gate electrode, where a strong electric field peak is formed, such as Figu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/40H01L29/06
CPCH01L29/0623H01L29/404H01L29/7787
Inventor 冯全源陈飞文彦
Owner SOUTHWEST JIAOTONG UNIV
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