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Flexible thin film device and preparation method thereof

A thin-film device and flexible thin-film technology, applied in the field of flexible thin-film devices and their preparation, can solve the problems of flexibility and high temperature resistance, and achieve the effect of a simple preparation method

Inactive Publication Date: 2021-02-19
重庆神华薄膜太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Another purpose of the present invention is to extend this method to the preparation process of all flexible thin film devices, especially to solve the technical problem that the preparation of thin film devices requires a high temperature process, and the flexibility is not resistant to high temperature

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This embodiment provides a method for preparing a flexible thin film solar cell, the steps are as follows:

[0040](1) A mica sheet with a size of 10cm×10cm and a thickness of 1mm (its single-layer lattice structure is 0.7nm) is selected as a high-temperature-resistant substrate for preparing copper indium gallium selenide thin film solar cells.

[0041] (2) Prepare the following film layers sequentially on the mica sheet: a metal molybdenum back electrode film layer with a thickness of 400 nm is deposited by magnetron sputtering, and a copper indium gallium selenide semiconductor layer with a thickness of 1.5 μm is deposited by co-evaporation at a process temperature of 600° C. to 700° C. For the light absorbing layer, a 50nm thick CdS buffer film layer is deposited in a chemical bath, a 50nm thick intrinsic ZnO layer and an 800nm ​​thick aluminum-doped ZnO film layer are magnetron sputtered.

[0042] (3) Use a Scotch scotch tape with a width of 15 cm to press and stic...

Embodiment 2

[0048] This embodiment provides another method for preparing a large-area flexible thin-film solar cell, the steps are as follows:

[0049] (1) In order to obtain a large-area flexible thin-film solar cell, select 100 mica sheets with a size of 10cm×10cm and a thickness of 1mm, and connect these mica sheets to each other by mosaic or bonding to form a large area of ​​100cm×100cm The substrate is used as a high temperature resistant substrate for the preparation of copper indium gallium selenide thin film solar cells. The large-area preparation of other high-temperature-resistant layered substrates (such as graphite, etc.) is similar to this method.

[0050] (2) Prepare the following film layers sequentially on the above-mentioned large-area layered structure substrate: a metal molybdenum back electrode film layer with a thickness of 400 nm is deposited by magnetron sputtering, and a 1.5 μm film is deposited by co-evaporation at a process temperature of 600 ° C to 700 ° C Thic...

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Abstract

The invention discloses a flexible thin film device and a preparation method thereof. The preparation method comprises the following steps of (1) preparing the thin film device on the surface of a first substrate with a layered crystal structure; (2) stripping the thin film device from the surface of the first substrate by using an adhesive tape; and (3) transferring the thin film device attachedto the adhesive tape to the surface of a flexible second substrate to obtain the flexible thin film device. The preparation method of the present invention is simple and convenient, the structure of the thin film device is not damaged, and the problem that the flexible thin film device is difficult to directly prepare due to the fact that the flexible substrate is not resistant to high temperatureis ingeniously solved.

Description

technical field [0001] The invention relates to a flexible thin film device and a preparation method thereof, belonging to the technical field of flexible electronic devices. Background technique [0002] Copper indium gallium selenide photovoltaic technology is currently the thin film solar cell with the highest photoelectric conversion efficiency (more than 23%). It also has the advantages of good low-light performance, low temperature coefficient, small outdoor power attenuation, and beautiful appearance. Copper indium gallium selenide (CIGS) solar cells have been used in various fields such as ground power stations, buildings, and mobile energy, and their commercialization prospects are extremely broad. [0003] Flexible copper indium gallium selenide thin-film solar cells have the characteristics of light weight, high power-to-weight ratio, foldable, and portable. They can be laid according to the shape of the attachment, and are suitable for low-load buildings and tran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0392
CPCH01L31/03928H01L31/1896Y02E10/541Y02P70/50
Inventor 党文辉赵剑何敏王志永
Owner 重庆神华薄膜太阳能科技有限公司
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