Heat sink capable of improving heat conduction efficiency of semiconductor laser chip and preparation method thereof
A semiconductor and heat conduction technology, applied in the direction of semiconductor lasers, lasers, laser parts, etc., can solve problems such as cost increase, damage to the electrical performance of LED devices, damage to precision equipment and operators, and achieve easy operation, excellent heat conduction efficiency, equipment, etc. and no harm to personnel
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Embodiment 1
[0029] A heat sink capable of improving the heat conduction efficiency of a semiconductor laser chip, comprising a silicon carbide substrate 4 with a length and width of 5mm×5mm and a thickness of 0.1mm; the upper surface of the silicon carbide substrate 4 is separated by ultraviolet lithography or dry etching technology A number of rectangular parallelepiped grooves are etched with a width of 10 μm and a depth of 500 nm; the upper surface of the silicon carbide substrate outside the grooves is prepared in situ by high-temperature sublimation method, and the thickness of the graphene 2 layer is 1 nm; The groove is filled with the solder 1 required for soldering the semiconductor laser chip 3 through a lift-off process, and the thickness of the solder 1 is 500nm. The semiconductor laser chip 3 is combined with the silicon carbide substrate 4 through solder 1 .
Embodiment 2
[0031] A heat sink capable of improving the heat conduction efficiency of a semiconductor laser chip, comprising a silicon carbide substrate 4 with a length and width of 100mm×100mm and a thickness of 0.1mm; the upper surface of the silicon carbide substrate 4 is separated by ultraviolet lithography or dry etching technology A number of rectangular parallelepiped grooves are etched with a width of 1 mm and a depth of 5 μm; the upper surface of the silicon carbide substrate outside the grooves is prepared in situ by high-temperature sublimation method, and the thickness of the graphene 2 layer is 1 μm; The groove is filled with the solder 1 required for soldering the semiconductor laser chip 3 through a lift-off process, and the thickness of the solder 1 is 5 μm. The semiconductor laser chip 3 is combined with the silicon carbide substrate 4 through solder 1 .
Embodiment 3
[0033] A heat sink capable of improving the heat conduction efficiency of a semiconductor laser chip, comprising a silicon carbide substrate 4 with a length and width of 5mm×50mm and a thickness of 0.2mm; the upper surface of the silicon carbide substrate 4 is separated by ultraviolet lithography or dry etching technology A number of cuboid grooves are etched with a width of 20 μm and a depth of 1 μm; the upper surface of the silicon carbide substrate outside the grooves is prepared in situ by high-temperature sublimation method, and the thickness of the graphene 2 layer is 2 nm; The groove is filled with solder 1 required for soldering the semiconductor laser chip 3 through a lift-off process, and the thickness of the solder 1 is 1 μm. The semiconductor laser chip 3 is combined with the silicon carbide substrate 4 through solder 1 .
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