Low current, high power laser diode bar

A laser diode, high-power technology, used in lasers, laser devices, semiconductor lasers, etc., can solve problems such as reducing device performance and efficiency, and achieve the effects of reducing resistance, reducing current requirements, Joule heating, and reducing series resistance.

Pending Publication Date: 2021-02-19
TRUMP PHOTONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Considering that Joule heating scales quadratically with diode current, laser diodes experience considerable heat dissipation, which can substantially degrade the performance and efficiency of the device

Method used

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  • Low current, high power laser diode bar
  • Low current, high power laser diode bar
  • Low current, high power laser diode bar

Examples

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Embodiment Construction

[0025] The ever-increasing drive currents for high power laser diode bars are due, at least in part, to their configuration in which the individual laser diodes within the laser diode bars are electrically connected in parallel with each other. Considering that the total laser diode bar drive current corresponds to the sum of the drive currents on each individual diode, the increasing number of individual diodes within the bar then adds to the total current. Similarly, as the current drive capability of the individual diodes increases, the maximum total current of the laser diode bars also increases.

[0026]The present disclosure is directed to a laser diode bar configuration that facilitates a reduction in overall current by connecting individual laser diodes in series. In a series configuration, the drive current of the entire laser diode bar is limited by the laser diode within the bar with the smallest current drive capability. Thus, a substantial reduction in the maximu...

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Abstract

A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivitytype that is between the first laser diode stack and the second laser diode stack.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This disclosure relates to and claims priority to US Provisional Patent Application No. 62 / 671,169, filed May 14, 2018, entitled "Low Current, High Power Laser Diode Bars," the entire contents of which are incorporated herein by reference. Background technique [0003] A laser diode bar is a device for providing laser output, wherein the device includes at least a one-dimensional array of individual semiconductor laser diodes. A typical laser diode bar for high power applications may include, for example, 10-50 laser diodes, each laser diode having an emitter width between, for example, 40-500 microns, and a resonator, for example, between 500-10000 microns length. The power requirement of a single high-power laser diode bar is more than 1000W. Such high power may require drive currents of 1000A or higher. Considering that Joule heating scales quadratically with diode current, laser diodes experience considerable heat ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40
CPCH01S5/0207H01S5/026H01S5/0421H01S5/22H01S5/4018H01S5/4031H01S2301/176H01S5/04256G02B19/0057H01S5/3211H01S5/4025H01S5/04257
Inventor T.韦撒克S.海内曼S.R.达斯
Owner TRUMP PHOTONICS
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