A normally-on high electron mobility transistor and its manufacturing method

Abstract

The invention belongs to the technical field of semiconductors, in particular to a normally-on AlGaN / GaN high electron mobility transistor and a manufacturing method thereof. The transistor includes a silicon substrate, an epitaxial structure, a drain electrode, a drain ohmic contact metal layer, a passivation layer, a source electrode and a gate electrode, and is characterized in that the source electrode and the drain electrode are respectively located on the upper and lower sides of the device , can improve the problems faced by AlGaN / GaN high electron mobility transistors with planar structure, and adopt the epitaxial growth of selective silicon substrate to separate the AlGaN / GaN epitaxial layer on the silicon substrate into small independent patterns, which greatly reduces the silicon substrate The stress accumulation between the AlGaN / GaN epitaxial layer solves the problems of cracking and bending of the epitaxial film, and can improve the manufacturing yield and reliability of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a normally-on AlGaN / GaN high electron mobility transistor and a manufacturing method thereof. Background technique [0002] Compared with the first and second-generation semiconductor materials, the third-generation semiconductor material GaN material has the advantages of large band gap, high breakdown field strength, large electron mobility, and strong radiation resistance. GaN-based high electron mobility transistors are used in High-frequency and high-power fields such as wireless communication base stations, radars, and automotive electronics have great potential for development. The emergence of the AlGaN / GaN high electron mobility transistor (AlGaN / GaN HEMT) structure is based on the phenomenon described by T.Mimura et al. in 1975 and M.A.Khan et al. in 1994: the interface region between AlGaN and GaN heterostructures shows abnormal high electron mobility. At pres...

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Problems solved by technology

[0004] In the present invention, the source electrode and the drain electrode are respectively located on the upper and lower sides of the transistor, which solves the problems faced by the planar structure AlGaN / GaN high electron mobility transistor, and adopts the epitaxial growth of the selected area silicon substrate to make the AlGaN on the silicon substrate / GaN epitaxial layer is separated into independent small patterns, which greatly reduces the stress accumulation between the silicon substrate and the AlGaN / GaN epitaxial layer, solves the problems of cracking and bending of the epitaxial film, and can improve the manufacturing yield and reliability of the device sex

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