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Distributed ESD device with embedded SCR structure

An ESD device, distributed technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve the problem of low current handling capacity, achieve the effect of good heat dissipation, reduce on-resistance, and improve robustness

Active Publication Date: 2021-02-26
CHONGQING RADIO & TV UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a distributed ESD device embedded in an SCR structure, which solves the problem of low current handling capacity of the existing ESD device with a cascaded diode structure

Method used

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  • Distributed ESD device with embedded SCR structure
  • Distributed ESD device with embedded SCR structure
  • Distributed ESD device with embedded SCR structure

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Experimental program
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Embodiment

[0032] A distributed ESD device embedded in an SCR structure, basically as attached figure 2 As shown: a substrate 210 is included, and the substrate 210 includes a deep N well region 240 and cascaded diode units disposed on the deep N well region 240 . like Figure 4 As shown, a distributed layout structure is adopted on the substrate 210, and the number of cascaded diode units is greater than or equal to two. In this embodiment, four cascaded diode units arranged in parallel and equally spaced are provided, and each cascaded diode unit has the same structure. like image 3 and Figure 4 As shown, the sum of the area of ​​the four cascaded diode units on the surface of the substrate 210 is equal to the area of ​​the single cascaded diode unit on the substrate surface.

[0033] like figure 2 As shown, the cascaded diode unit includes a third N well region 220 and a P well region 230 arranged adjacently, a third P+ implant region 221 is provided in the third N well regio...

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Abstract

The invention relates to the technical field of electrostatic discharge protection of integrated circuits, and particularly relates to a distributed ESD device with an embedded SCR structure. The device comprises a substrate, the substrate comprises a deep N well region and a cascade diode unit arranged on the deep N well region, the cascade diode unit comprises a third N well region and a P wellregion which are arranged adjacently, a third P+ injection region is arranged in the third N well region, and a third N+ injection region is arranged in the third P+ injection region in an isolated manner; a fourth N+ injection region is arranged in the P well region, and a fourth P+ injection region is arranged in the fourth N+ injection region in an isolated manner; and the third P+ injection region is connected with the anode, the third N+ injection region is connected with the fourth P+ injection region, and the fourth N+ injection region is connected with the cathode. According to the invention, a problem of a low current processing capability of the existing ESD device with the cascade diode structure is solved.

Description

technical field [0001] The invention relates to the technical field of electrostatic discharge protection of integrated circuits, in particular to a distributed ESD device embedded in an SCR structure. Background technique [0002] ESD stands for Electrostatic Discharge, which is a common phenomenon in nature. ESD exists in every corner of people's daily life. But it is such a common electrical phenomenon that is a fatal threat to sophisticated integrated circuits. [0003] With the improvement of integrated circuit manufacturing technology, its minimum line width has dropped to submicron or even nanometer level. While improving chip performance, its ability to resist ESD is also greatly reduced, so electrostatic damage is more serious. The contradiction between process development and chip ESD resistance has become a problem that IC designers must consider. [0004] Diodes are widely used for on-chip or system-level ESD protection due to their simple structure, high tran...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0255
Inventor 孙康明
Owner CHONGQING RADIO & TV UNIV